Datasheet > IXYP24N100C4

IXYP24N100C4

更新时间： 2023-12-06 20:13:14

品牌	Logo	应用领域
力特 - LITTELFUSE		栅极驱动双极性晶体管
页数	文件大小	规格书
8页	370K
描述
通过利用XPT?薄晶圆技术和第4代 (GenX4?) Trench IGBT流程，这些高达1200V的器件有助于降低栅极驱动要求和传导损耗。具有低热阻、低损耗、高电流密度和低栅极电荷要求的特点。

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IXYP24N100C4 数据手册

Advance Technical Information

1000V XPT^TM

GenX4^TMIGBT

V_CES= 1000V

I_C110= 24A

V_CE(sat) 2.3V

t_fi(typ)= 40ns

IXYA24N100C4HV

IXYP24N100C4

High Speed IGBT

for 20-50kHz Switching

TO-263HV

(IXYA..HV)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 175°C

1000

T_J= 25°C to 175°C, R_GE= 1M

C (Tab)

V_GES

V_GEM

Continuous

Transient

±20

±30

TO-220

(IXYP)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

132

SSOA

V_GE= 15V, T_VJ= 150°C, R_G= 10

Clamped Inductive Load

I_CM= 48

μs

C (Tab)

(RBSOA)

V_CE 0.8 • V_CES

t_sc

V_GE= 15V, V_CE= 660V, T_J= 150°C

G = Gate

= Collector

(SCSOA)

R_G= 50, Non Repetitive

e = Emitter

Tab = Collector

P_C

T_C= 25°C

375

T_J

T_JM

T_stg

-55 ... +175

175

°C

-55 ... +175

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



Optimized for Low Switching Losses

Positive Thermal Coefficient of

Vce(sat)



M_d

F_C

Mounting Torque (TO-220)

Mounting Force (TO-263HV)

1.13/10

10..65 / 22..14.6

Nm/lb.in

N/lb

International Standard Packages

Weight

TO-263HV

TO-220

2.5

3.0

Advantages



High Power Density

Low Gate Drive Requirement



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

1000

4.0

Typ.

Max.

Applications

BV_CES

V_GE(th)

I_CES

I_C= 250A, V_GE= 0V

I_C= 250A, V_CE= V_GE

V_CE= V_CES, V_GE= 0V



Power Inverters

UPS

Motor Drives

SMPS



6.5



25 A

500 μA



T_J= 150C



Battery Chargers

Welding Machines

Lamp Ballasts

I_GES

V_CE= 0V, V_GE= 20V

100 nA

V_CE(sat)

I_C= 24A, V_GE= 15V, Note 1

1.86

2.30

DS100933A(9/18)

12 3 4 5 6 7 8

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