5秒后页面跳转
IXYP30N65C3 PDF预览

IXYP30N65C3

更新时间: 2024-11-21 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
7页 214K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产,具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。 它们具有正集电

IXYP30N65C3 数据手册

 浏览型号IXYP30N65C3的Datasheet PDF文件第2页浏览型号IXYP30N65C3的Datasheet PDF文件第3页浏览型号IXYP30N65C3的Datasheet PDF文件第4页浏览型号IXYP30N65C3的Datasheet PDF文件第5页浏览型号IXYP30N65C3的Datasheet PDF文件第6页浏览型号IXYP30N65C3的Datasheet PDF文件第7页 
XPTTM 650V IGBT  
GenX3TM  
VCES = 650V  
IC110 = 30A  
VCE(sat)  2.7V  
tfi(typ) = 24ns  
IXYP30N65C3  
IXYH30N65C3  
Extreme Light Punch Through  
IGBT for 20-60kHz Switching  
TO-220  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
Tab  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
E
TJ = 25°C to 175°C, RGE = 1M  
TO-247  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
60  
30  
118  
A
A
A
G
C
Tab  
E
IA  
EAS  
TC = 25°C  
TC = 25°C  
10  
A
300  
mJ  
G = Gate  
E = Emitter  
C
=
Collector  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 10  
Clamped Inductive Load  
ICM = 60  
A
μs  
W
Tab = Collector  
(RBSOA)  
VCE VCES  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
8
(SCSOA)  
RG = 82, Non Repetitive  
Features  
PC  
TC = 25°C  
270  
Optimized for 20-60kHz Switching  
Square RBSOA  
Avalanche Rated  
Short Circuit Capability  
International Standard Packages  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13/10  
Nm/lb.in  
High Power Density  
Extremely Rugged  
Low Gate Drive Requirement  
Weight  
TO-220  
TO-247  
3
6
g
g
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
6.0  
15 A  
200 A  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
2.35  
2.58  
2.70  
V
V
High Frequency Power Inverters  
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100539C(10/14)  

与IXYP30N65C3相关器件

型号 品牌 获取价格 描述 数据表
IXYP50N65C3 IXYS

获取价格

IGBT 650V 130A 600W TO220
IXYP50N65C3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP8N90C3 IXYS

获取价格

900V XPTTM IGBT
IXYP8N90C3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYP8N90C3D1 IXYS

获取价格

900V XPTTM IGBT
IXYP8N90C3D1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYQ40N65B3D1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYQ40N65C3D1 IXYS

获取价格

Advance Technical Information
IXYQ40N65C3D1 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT
IXYR100N120C3 LITTELFUSE

获取价格

该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT