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IXYA8N90C3D1

更新时间: 2024-01-16 19:49:31
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 363K
描述
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT?)设计平台生产,具有高电流处理能力、高速开关功能、较低的总能量损失和较短的电流下降时间。 它们具有正集电

IXYA8N90C3D1 数据手册

 浏览型号IXYA8N90C3D1的Datasheet PDF文件第1页浏览型号IXYA8N90C3D1的Datasheet PDF文件第3页浏览型号IXYA8N90C3D1的Datasheet PDF文件第4页浏览型号IXYA8N90C3D1的Datasheet PDF文件第5页浏览型号IXYA8N90C3D1的Datasheet PDF文件第6页浏览型号IXYA8N90C3D1的Datasheet PDF文件第7页 
IXYA8N90C3D1  
IXYP8N90C3D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-263 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 8A, VCE = 10V, Note 1  
2.9  
4.8  
S
Cies  
Coes  
Cres  
400  
30  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
7.8  
Qg(on)  
Qge  
Qgc  
13.3  
3.4  
nC  
nC  
nC  
1. Gate  
IC = 8A, VGE = 15V, VCE = 0.5 • VCES  
2. Collector  
3. Emitter  
4. Collector  
Bottom Side  
5.8  
td(on)  
tri  
Eon  
td(off)  
tfi  
16  
20  
ns  
ns  
mJ  
ns  
Inductive load, TJ = 25°C  
IC = 8A, VGE = 15V  
0.46  
40  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VCE = 0.5 • VCES, RG = 30  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
130  
0.18  
ns  
Note 2  
Eof  
0.50 mJ  
f
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
td(on)  
tri  
Eon  
td(off)  
tfi  
17  
22  
ns  
ns  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
Inductive load, TJ = 125°C  
E
9.65  
10.41  
.380  
.405  
IC = 8A, VGE = 15V  
1.00  
75  
mJ  
ns  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
VCE = 0.5 • VCES, RG = 30  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
163  
0.22  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
1.2 °C/W  
°C/W  
TO-220  
0.50  
TO-220 Outline  
Reverse Diode (FRED)  
(TJ = 25°C, Unless Otherwise Specified)  
Characteristic Value  
Symbol  
Test Conditions  
Min. Typ.  
Max.  
VF  
3.0  
2.0  
V
V
IF = 10A,VGE = 0V, Note 1  
TJ = 150°C  
IRM  
trr  
7.5  
A
IF = 10A,VGE = 0V, -diF/dt = 200A/μs, TJ = 100°C  
VR = 600V  
TJ = 100°C  
114  
ns  
RthJC  
2.5 °C/W  
Pins: 1 - Gate  
2 - Collector  
3 - Emitter  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  

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