IXYA8N90C3D1
IXYP8N90C3D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-263 Outline
Min.
Typ.
Max.
gfs
IC = 8A, VCE = 10V, Note 1
2.9
4.8
S
Cies
Coes
Cres
400
30
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
7.8
Qg(on)
Qge
Qgc
13.3
3.4
nC
nC
nC
1. Gate
IC = 8A, VGE = 15V, VCE = 0.5 • VCES
2. Collector
3. Emitter
4. Collector
Bottom Side
5.8
td(on)
tri
Eon
td(off)
tfi
16
20
ns
ns
mJ
ns
Inductive load, TJ = 25°C
IC = 8A, VGE = 15V
0.46
40
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VCE = 0.5 • VCES, RG = 30
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
130
0.18
ns
Note 2
Eof
0.50 mJ
f
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
td(on)
tri
Eon
td(off)
tfi
17
22
ns
ns
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
Inductive load, TJ = 125°C
E
9.65
10.41
.380
.405
IC = 8A, VGE = 15V
1.00
75
mJ
ns
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
VCE = 0.5 • VCES, RG = 30
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
163
0.22
ns
Note 2
Eoff
mJ
RthJC
RthCS
1.2 °C/W
°C/W
TO-220
0.50
TO-220 Outline
Reverse Diode (FRED)
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Value
Symbol
Test Conditions
Min. Typ.
Max.
VF
3.0
2.0
V
V
IF = 10A,VGE = 0V, Note 1
TJ = 150°C
IRM
trr
7.5
A
IF = 10A,VGE = 0V, -diF/dt = 200A/μs, TJ = 100°C
VR = 600V
TJ = 100°C
114
ns
RthJC
2.5 °C/W
Pins: 1 - Gate
2 - Collector
3 - Emitter
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537