Datasheet > IXTY08N100P_V01

IXTY08N100P_V01

更新时间： 2024-11-07 01:19:19

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	263K
描述
N-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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IXTY08N100P_V01 数据手册

Polar^TM

Power MOSFET

IXTY08N100P

IXTA08N100P

IXTP08N100P

V_DSS= 1000V

I_D25= 0.8A

R_DS(on) 20

N-Channel Enhancement Mode

Avalanche Rated

TO-252 (IXTY)

D (Tab)

TO-263 (IXTA)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

1000

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

20

30

D (Tab)

TO-220 (IXTP)

I_D25

I_DM

T_C= 25C

0.8

1.5

T_C= 25C, Pulse Width Limited by T_JM

I_A

T_C= 25C

0.8

D (Tab)

E_AS

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

G = Gate

S = Source

= Drain

Tab = Drain

T_J

-55 ... +150

150

C

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



International Standard Packages

Low Q_G

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier



F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-220)

10..65 / 2.2..14.6

1.13 / 10

N/lb

Nm/lb.in

Weight

TO-252

TO-263

TO-220

0.35

2.50

3.00

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 50μA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

1000



2.0

4.0

DC-DC Converters

Switch-Mode and Resonant-Mode



50 nA

A

Power Supplies

AC and DC Motor Drives



I_DSS





Lasers Driverserators

T_J= 125C

100 A





Robotics and Servo Controls

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

20 

DS99865D(8/17)

12 3 4 5 6

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