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IXTY08N100P-TRL PDF预览

IXTY08N100P-TRL

更新时间: 2024-11-06 11:01:03
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 257K
描述
Power Field-Effect Transistor,

IXTY08N100P-TRL 数据手册

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PolarTM  
Power MOSFET  
IXTY08N100P  
IXTA08N100P  
IXTP08N100P  
VDSS = 1000V  
ID25 = 0.8A  
RDS(on) 20  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-252 (IXTY)  
G
S
D (Tab)  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
1000  
1000  
V
V
G
S
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
D (Tab)  
TO-220 (IXTP)  
ID25  
IDM  
TC = 25C  
0.8  
1.5  
A
A
TC = 25C, Pulse Width Limited by TJM  
IA  
TC = 25C  
TC = 25C  
0.8  
80  
A
G
D
D (Tab)  
EAS  
mJ  
S
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
42  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low QG  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
1000  
V
V
2.0  
4.0  
DC-DC Converters  
Switch-Mode and Resonant-Mode  
50 nA  
A  
Power Supplies  
AC and DC Motor Drives  
IDSS  
3
Lasers Driverserators  
TJ = 125C  
100 A  
  
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
17  
20   
DS99865D(8/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

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