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IXTY15P15T PDF预览

IXTY15P15T

更新时间: 2024-11-05 15:35:39
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 286K
描述
Power Field-Effect Transistor,

IXTY15P15T 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.76
Base Number Matches:1

IXTY15P15T 数据手册

 浏览型号IXTY15P15T的Datasheet PDF文件第2页浏览型号IXTY15P15T的Datasheet PDF文件第3页浏览型号IXTY15P15T的Datasheet PDF文件第4页浏览型号IXTY15P15T的Datasheet PDF文件第5页浏览型号IXTY15P15T的Datasheet PDF文件第6页浏览型号IXTY15P15T的Datasheet PDF文件第7页 
TrenchPTM  
Power MOSFET  
VDSS = - 150V  
ID25 = - 15A  
IXTY15P15T  
IXTA15P15T  
IXTP15P15T  
RDS(on)  
240m  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-252 (IXTY)  
G
S
D (Tab)  
D (Tab)  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
- 150  
- 150  
V
V
S
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
15  
25  
V
V
TO-220 (IXTP)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
- 15  
- 45  
A
A
G
D
S
D (Tab)  
IA  
EAS  
TC = 25C  
TC = 25C  
- 15  
300  
A
mJ  
PD  
TC = 25C  
150  
W
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
International Standard Packages  
Avalanche Rated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Extended FBSOA  
Fast Intrinsic Diode  
Low RDS(ON) and QG  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Easy to Mount  
Space Savings  
High Power Density  
(TJ = 25C, Unless Otherwise Specified)  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250A  
VDS = VGS, ID = - 250A  
VGS = 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
-150  
V
V
- 2.0  
- 4.5  
Applications  
50 nA  
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
IDSS  
- 10 A  
- 250 A  
TJ = 125C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
240 m  
DS100292B(8/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

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