Datasheet > IXTY18P10T-TRL

IXTY18P10T-TRL

更新时间： 2024-11-05 21:21:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	280K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTY18P10T-TRL 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

IXTY18P10T-TRL 数据手册

TrenchP^TM

Power MOSFET

V_DSS= - 100V

I_D25= - 18A

IXTY18P10T

IXTA18P10T

IXTP18P10T

R_DS(on)



120m

P-Channel Enhancement Mode

Avalanche Rated

TO-252 (IXTY)

D (Tab)

TO-263 (IXTA)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

- 100

V_DGR

V_GSS

V_GSM

Continuous

Transient

15

25

TO-220 (IXTP)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

-18

- 60

D (Tab)

I_A

E_AS

T_C= 25C

-18

200

P_D

T_C= 25C

G = Gate

= Drain

S = Source

Tab = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features

^International Standard Packages

^Avalanche Rated

M_d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in

Weight

TO-252

TO-263

TO-220

0.35

2.50

3.00

^Extended FBSOA

^Fast Intrinsic Diode



Low R_DS(ON)and Q_G

Advantages



Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

Easy to Mount

Space Savings

High Power Density

(T_J= 25C, Unless Otherwise Specified)



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250A

V_DS= V_GS, I_D= - 250A

V_GS= 15V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

-100

- 2.5

- 4.5

Applications

50 nA



High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

Battery Charger Applications



I_DSS

- 3 A

-100 A



T_J= 125C



R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

120 m



DS99966D(8/17)

12 3 4 5 6

中文翻译

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