5秒后页面跳转
IXTP170N13X4 PDF预览

IXTP170N13X4

更新时间: 2024-02-02 03:10:56
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 238K
描述
Power Field-Effect Transistor,

IXTP170N13X4 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.39
Base Number Matches:1

IXTP170N13X4 数据手册

 浏览型号IXTP170N13X4的Datasheet PDF文件第2页浏览型号IXTP170N13X4的Datasheet PDF文件第3页浏览型号IXTP170N13X4的Datasheet PDF文件第4页浏览型号IXTP170N13X4的Datasheet PDF文件第5页浏览型号IXTP170N13X4的Datasheet PDF文件第6页 
Advance Technical Information  
X4-Class  
VDSS = 135V  
ID25 = 170A  
RDS(on) 6.30m  
IXTP170N13X4  
Power MOSFETTM  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-220  
(IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
135  
135  
V
V
G
D
S
VDGR  
TJ = 25C to 175C, RGS = 1M  
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
ID25  
IL(RMS)  
TC = 25C (Chip Capability)  
External Lead Current Limit  
170  
120  
A
A
IDM  
TC = 25C, Pulse Width Limited by TJM  
340  
A
IA  
TC = 25C  
TC = 25C  
85  
1
A
J
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
V/ns  
W
Features  
480  
International Standard Package  
Low RDS(ON) and QG  
Avalanche Rated  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
-55 ... +175  
Low Package Inductance  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13 / 10  
3
Nm/lb.in  
g
High Power Density  
Weight  
Easy to Mount  
Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
135  
V
V
2.5  
4.5  
100 nA  
IDSS  
10 A  
TJ = 150C  
500 A  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
5.15  
6.30 m  
DS100949A(12/18)  
© 2018 IXYS CORPORATION, All Rights Reserved.  

与IXTP170N13X4相关器件

型号 品牌 获取价格 描述 数据表
IXTP180N055T IXYS

获取价格

Trench Gate Power MOSFET
IXTP180N085T IXYS

获取价格

Power Field-Effect Transistor, 180A I(D), 85V, 0.0055ohm, 1-Element, N-Channel, Silicon, M
IXTP180N10T IXYS

获取价格

Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon,
IXTP180N10T LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTP182N055T IXYS

获取价格

TrenchMV™ Power MOSFET
IXTP182N055T LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(ON)极低,因此确保了非常低
IXTP18N60PM IXYS

获取价格

Power Field-Effect Transistor, 9A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Meta
IXTP18P10T LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTP18P10T IXYS

获取价格

Power Field-Effect Transistor, 18A I(D), 100V, 0.12ohm, 1-Element, P-Channel, Silicon, Met
IXTP1N100 IXYS

获取价格

High Voltage MOSFET