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IXTP180N10T PDF预览

IXTP180N10T

更新时间: 2024-11-20 21:15:35
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
6页 155K
描述
Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

IXTP180N10T 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.69
其他特性:AVALANCHE RATED, ULTRA LOW RESISTANCE雪崩能效等级(Eas):750 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):180 A
最大漏极电流 (ID):180 A最大漏源导通电阻:0.0064 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):480 W
最大脉冲漏极电流 (IDM):450 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTP180N10T 数据手册

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TrenchMVTM  
Power MOSFET  
IXTA180N10T  
IXTP180N10T  
VDSS = 100V  
ID25 = 180A  
RDS(on) 6.4mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
Symbol  
Test Conditions  
Maximum Ratings  
(TAB)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
TO-220 (IXTP)  
VGSM  
Transient  
± 30  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current limit, RMS  
TC = 25°C, pulse width limited by TJM  
180  
75  
450  
A
A
A
G
D
S
(TAB)  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
A
750  
mJ  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC = 25°C  
480  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
z Ultra-low On Resistance  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
z 175 °C Operating Temperature  
TL  
TSOLD  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting torque (TO-220)  
1.13/10  
Nm/lb.in  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
100  
2.5  
V
V
Automotive  
- Motor Drives  
- 42V Power Bus  
4.5  
± 100 nA  
μA  
100 μA  
- ABS Systems  
z
IDSS  
VDS = VDSS  
VGS = 0V  
5
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
z
TJ = 150°C  
Systems  
Distributed Power Architechtures  
RDS(on)  
VGS = 10V, ID = 25A, Notes 1, 2  
5.7  
6.4 mΩ  
z
and VRMs  
Electronic Valve Train Systems  
High Current Switching Applications  
High Voltage Synchronous Recifier  
z
z
z
DS99651A(3/08)  
© 2008 IXYS CORPORATION, All rights reserved  

IXTP180N10T 替代型号

型号 品牌 替代类型 描述 数据表
IXTA180N10T7 IXYS

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Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon,
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