Datasheet > IXTP-200N085T

IXTP-200N085T

更新时间： 2024-09-13 12:49:11

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	221K
描述
N-Channel Enhancement Mode Avalanche Rated

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中文翻译

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数据手册

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IXTP-200N085T 数据手册

Preliminary Technical Information

TrenchMV^TM

Power MOSFET

IXTA 200N085T

IXTP 200N085T

V_DSS= 85

I_D25= 200

R_DS(on)≤ 5.0 mΩ

N-Channel Enhancement Mode

Avalanche Rated

Symbol

Test Conditions

Maximum Ratings

TO-263 (IXTA)

V_DSS

V_DGR

T_J= 25° C to 175° C

T_J= 25° C to 175° C; R_GS= 1 MΩ

V_GSM

Transient

(TAB)

I_D25

I_LRMS

I_DM

T_C= 25° C

Lead Current Limit, RMS

T_C= 25° C, pulse width limited by T_JM

200

540

TO-220 (IXTP)

I_AR

E_AS

T_C=25°C

T_C= 25° C

1.0

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤175° C, R_G= 5 Ω

V/ns

(TAB)

T_C=25°C

480

G = Gate

S = Source

D = Drain

TAB = Drain

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

Features

^ꢀUltra-low On Resistance

^ꢀUnclamped Inductive Switching (UIS)

rated

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 seconds

300

260

°C

^ꢀLow package inductance

- easy to drive and to protect

^ꢀ175 ° C Operating Temperature

M_d

Mounting torque (TO-220)

1.13 / 10 Nm/lb.in.

Weight

TO-220

TO-263

2.5

Advantages

Easy to mount

Space savings

High power density

ꢀ

Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25° C unless otherwise specified)

Min. Typ.

Max.

ꢀ

Automotive

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250 µA

- Motor Drives

- 42V Power Bus

2.0

4.0

- ABS Systems

ꢀ

DC/DC Converters and Off-line UPS

Primary Switch for 24V and 48V

V_GS

20 V, V_DS= 0 V

200

ꢀ

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

µA

Systems

High Current Switching

ꢀ

T_J= 150° C

Applications

R_DS(on)

V_GS= 10 V, I_D= 25 A, Notes 1, 2

4.2

5.0 m Ω

DS99643 (11/06)

12 3 4 5

中文翻译

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