品牌 | Logo | 应用领域 |
力特 - LITTELFUSE | / | |
页数 | 文件大小 | 规格书 |
7页 | 296K | |
描述 | ||
Power Field-Effect Transistor, |
生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.75 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTP182N055T | IXYS |
获取价格 |
TrenchMV⢠Power MOSFET | |
IXTP182N055T | LITTELFUSE |
获取价格 |
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(ON)极低,因此确保了非常低 | |
IXTP18N60PM | IXYS |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 600V, 0.42ohm, 1-Element, N-Channel, Silicon, Meta | |
IXTP18P10T | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXTP18P10T | IXYS |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 100V, 0.12ohm, 1-Element, P-Channel, Silicon, Met | |
IXTP1N100 | IXYS |
获取价格 |
High Voltage MOSFET | |
IXTP1N100 | LITTELFUSE |
获取价格 |
高压系列N通道标准MOSFET适用于多种多样的电源开关系统,包括高压电源、电容放电电路、脉 | |
IXTP1N100P | IXYS |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal | |
IXTP1N100P | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal | |
IXTP1N120P | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 1200V, 20ohm, 1-Element, N-Channel, Silicon, Metal |