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IXTA50N20P PDF预览

IXTA50N20P

更新时间: 2024-11-05 03:13:43
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IXYS /
页数 文件大小 规格书
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描述
PolarHT Power MOSFET N-Channel Enhancement Mode

IXTA50N20P 数据手册

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PolarHTTM  
Power MOSFET  
IXTQ 50N20P  
IXTA 50N20P  
IXTP 50N20P  
VDSS = 200 V  
ID25 = 50 A  
RDS(on) = 60 mΩ  
N-Channel Enhancement Mode  
Preliminary Data Sheet  
TO-3P(IXTQ)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 175°C  
200  
200  
V
V
G
D
TJJ = 25°C to 175°C; RGS = 1 MΩ  
(TAB)  
S
VGSM  
20  
V
TO-220 (IXTP)  
ID25  
IDM  
T
= 25°C  
50  
A
A
TCC = 25°C, pulse width limited by TJM  
TC = 25°C  
120  
IAR  
50  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
(TAB)  
G
D
S
1.0  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 10 Ω  
,
10  
V/ns  
TO-263 (IXTA)  
TC = 25°C  
360  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +125  
°C  
°C  
°C  
G
S
(TAB)  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Maximum tab temperature for soldering  
TO-263 package for 10s  
300  
260  
°C  
°C  
G = Gate  
D = Drain  
TAB = Drain  
S = Source  
Features  
Md  
Mounting torque  
(TO-3P / TO-220)  
1.13/10 Nm/lb.in.  
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Weight  
TO-3P  
TO-220  
TO-263  
5.5  
4
3
g
g
g
z
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
200  
V
V
z
Easy to mount  
z
2.5  
5.0  
Space savings  
z
High power density  
100  
nA  
PolarHTTM DMOStransistors  
utilize proprietary designs and  
process. US patent is pending.  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 150°C  
RDS(on)  
VGS = 10 V, ID = IT  
50  
60 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99156A(04/04)  
© 2004 IXYS All rights reserved  

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