5秒后页面跳转
IXTA60N10T PDF预览

IXTA60N10T

更新时间: 2024-11-20 12:26:35
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
5页 178K
描述
N-Channel Enhancement Mode Avalanche Rated

IXTA60N10T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:8.46Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:12289937
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:OtherSamacsys Footprint Name:TO-263HV *
Samacsys Released Date:2020-02-15 00:15:00Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):60 A
最大漏极电流 (ID):60 A最大漏源导通电阻:0.018 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):176 W最大脉冲漏极电流 (IDM):180 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTA60N10T 数据手册

 浏览型号IXTA60N10T的Datasheet PDF文件第2页浏览型号IXTA60N10T的Datasheet PDF文件第3页浏览型号IXTA60N10T的Datasheet PDF文件第4页浏览型号IXTA60N10T的Datasheet PDF文件第5页 
TrenchMVTM  
Power MOSFET  
IXTA60N10T  
IXTP60N10T  
VDSS = 100V  
ID25 = 60A  
RDS(on) 18mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
G
S
Symbol  
Test Conditions  
Maximum Ratings  
(TAB)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
TO-220 (IXTP)  
VGSM  
Transient  
± 30  
V
ID25  
IDM  
TC = 25°C  
60  
180  
A
A
TC = 25°C, pulse width limited by TJM  
G
D
IA  
EAS  
TC = 25°C  
TC = 25°C  
10  
A
S
(TAB)  
500  
mJ  
PD  
TC = 25°C  
176  
W
G = Gate  
D
= Drain  
S = Source  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
TSOLD  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
z International standard packages  
z 175°C Operating Temperature  
z Avalanche Rated  
Md  
Mounting torque (TO-220)  
1.13/10  
Nm/lb.in  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
z
Low RDS(on)  
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
z
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
Systems  
High Current Switching Applications  
Distributed Power Architechtures  
and VRMs  
Electronic Valve Train Systems  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = ± 20V, VDS = 0V  
100  
2.5  
V
V
4.5  
z
z
± 100 nA  
μA  
IDSS  
VDS = VDSS  
VGS = 0V  
1
z
TJ = 150°C  
100 μA  
z
High Voltage Synchronous Recifier  
RDS(on)  
VGS = 10V, ID = 25A, Notes 1, 2  
14.8  
18 mΩ  
DS99647B(08/08)  
© 2007 IXYS CORPORATION, All rights reserved  

与IXTA60N10T相关器件

型号 品牌 获取价格 描述 数据表
IXTA60N10T-TRL IXYS

获取价格

Power Field-Effect Transistor,
IXTA60N20T IXYS

获取价格

N-Channel Enhancement Mode For PDP Drivers Avalanche Rated
IXTA60N20T LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低
IXTA60N20T-TRL IXYS

获取价格

Power Field-Effect Transistor,
IXTA62N15P IXYS

获取价格

PolarHT Power MOSFET
IXTA62N15P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTA64N10L2 IXYS

获取价格

N-Channel Power MOSFET
IXTA64N10L2 LITTELFUSE

获取价格

这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用,具有低热阻、高功率密度和正
IXTA64N10L2_V01 IXYS

获取价格

N-Channel Power MOSFET
IXTA6N100D2 IXYS

获取价格

Preliminary Technical Information Depletion Mode MOSFET