生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.7 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTA75N10P | IXYS |
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N-Channel Enhancement Mode | |
IXTA75N10P | LITTELFUSE |
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Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡 | |
IXTA76N075T | IXYS |
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Preliminary Technical Information N-Channel Enhancement Mode Avalanche Rated | |
IXTA76N075T | LITTELFUSE |
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沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(ON)极低,因此确保了非常低 | |
IXTA76N25T | IXYS |
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Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode | |
IXTA76N25T | LITTELFUSE |
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沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(ON)极低,因此确保了非常低 | |
IXTA76P10T | IXYS |
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P-Channel Enhancement Mode Avalanche Rated | |
IXTA76P10T | LITTELFUSE |
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Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱 | |
IXTA7N60P | IXYS |
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Power Field-Effect Transistor, 7A I(D), 600V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal | |
IXTA80N075L2 | IXYS |
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Power Field-Effect Transistor, |