Datasheet > IXTA56N15T

IXTA56N15T

更新时间： 2024-09-24 12:01:27

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	140K
描述
N-Channel Enhancement Mode Avalanche Rated

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXTA56N15T 数据手册

Preliminary Technical Information

TrenchHV^TM

Power MOSFET

IXTA56N15T

IXTP56N15T

V_DSS= 150

I_D25= 56

R_DS(on)≤ 36 mΩ

N-ChannelEnhancementMode

AvalancheRated

Symbol

Test Conditions

Maximum Ratings

TO-263 (IXTA)

V_DSS

V_DGR

T_J= 25°C to 175°C

150

T_J= 25°C to 175°C; R_GS= 1 MΩ

V_GSM

Transient

(TAB)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

140

TO-220 (IXTP)

I_AR

E_AS

T_C= 25°C

500

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 175°C, R_G= 5 Ω

V/ns

(TAB)

T_C= 25°C

300

G = Gate

S = Source

D = Drain

TAB = Drain

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 seconds

300

260

°C

M_d

Mounting torque (TO-220)

1.13 / 10 Nm/lb.in.

Features

^zUnclamped Inductive Switching (UIS)

rated

Weight

TO-220

TO-263

2.5

^zLow package inductance

- easy to drive and to protect

^z175 °C Operating Temperature

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 μA

V_DS= V_GS, I_D= 250 μA

150

2.5

4.5

V_GS

20 V, V_DS= 0 V

100

I_DSS

V_DS= V_DSS

V_GS= 0 V

200

μA

T_J= 150°C

R_DS(on)

V_GS= 10 V, I_D= 28 A, Notes 1, 2

36 mΩ

DS99800 (03/07)

12 3 4 5

中文翻译

下载PDF

与IXTA56N15T相关器件

型号	品牌	获取价格	描述	数据表
IXTA5N50P	IXYS	获取价格	PolarHV Power MOSFET - N-Channel Enhancement Mode
IXTA5N50P	LITTELFUSE	获取价格	Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡
IXTA5N60P	IXYS	获取价格	Power Field-Effect Transistor, 5A I(D), 600V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal
IXTA5N60P	LITTELFUSE	获取价格	Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡
IXTA60N10T	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated
IXTA60N10T	LITTELFUSE	获取价格	沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低
IXTA60N10T-TRL	IXYS	获取价格	Power Field-Effect Transistor,
IXTA60N20T	IXYS	获取价格	N-Channel Enhancement Mode For PDP Drivers Avalanche Rated
IXTA60N20T	LITTELFUSE	获取价格	沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低
IXTA60N20T-TRL	IXYS	获取价格	Power Field-Effect Transistor,