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IXTA56N15T PDF预览

IXTA56N15T

更新时间: 2024-11-06 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE
页数 文件大小 规格书
6页 197K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低的功率耗损。 再结合广泛的工作结温范围(从-40 °C到175 °C),这些产品非常适合汽车应用以及其他处

IXTA56N15T 数据手册

 浏览型号IXTA56N15T的Datasheet PDF文件第2页浏览型号IXTA56N15T的Datasheet PDF文件第3页浏览型号IXTA56N15T的Datasheet PDF文件第4页浏览型号IXTA56N15T的Datasheet PDF文件第5页浏览型号IXTA56N15T的Datasheet PDF文件第6页 
TrenchTM  
Power MOSFETs  
VDSS = 150V  
ID25 = 56A  
RDS(on) 36mΩ  
IXTA56N15T  
IXTP56N15T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
150  
150  
V
V
TO-220AB (IXTP)  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
ID25  
IDM  
TC = 25°C  
56  
A
A
G
D
D (Tab)  
= Drain  
S
TC = 25°C, Pulse Width Limited by TJM  
140  
IA  
TC = 25°C  
TC = 25°C  
5
A
G = Gate  
D
EAS  
500  
mJ  
S = Source  
Tab = Drain  
dv/dt  
PD  
IS IDM,, VDD VDSS,TJ 175°C  
TC = 25°C  
3
V/ns  
W
Features  
300  
z
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
International Standard Packages  
175°C Operating Temperature  
High Current Handling Capability  
Avalanche Rated  
Fast Intrinsic Rectifier  
Dynamic dv/dt Rated  
z
z
TJM  
Tstg  
-55 ... +175  
z
z
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z
z
Low RDS(on)  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
150  
3.0  
V
V
Applications  
5.0  
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
±100 nA  
μA  
z
z
IDSS  
5
Power Supplies  
DC Choppers  
AC Motor Drives  
Uninterruptible Power Supplies  
TJ = 150°C  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
200 μA  
36 mΩ  
z
z
RDS(on)  
z
z
High Speed Power Switching  
Applications  
DS99800A(05/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  

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