Datasheet > IXGN60N60C2D1

IXGN60N60C2D1

更新时间： 2024-11-05 12:28:19

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
5页	156K
描述
HiPerFASTTM IGBTs with Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXGN60N60C2D1 数据手册

HiPerFAST^TMIGBTs

with Diode

V_CES= 600V

I_C110= 60A

V_CE(sat)≤ 2.5V

IXGN60N60C2

IXGN60N60C2D1

t_rr

= 35ns

C2-Class High Speed IGBTs

SOT-227B, miniBLOC

E153432

60C2

60C2D1

Symbol

V_CES

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

600

V_CGR

T_J= 25°C to 150°C, R_GE= 1 MΩ

V_GES

V_GEM

I_C25

Continuous

±20

±30

Transient

T_C= 25°C (Limited by Leads)

T_C= 110°C

G = Gate, C = Collector, E = Emitter

c Either Emitter Terminal can be used as

Main or Kelvin Emitter

I_C110

I_CM

T_C= 25°C, 1 ms

300

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

Clamped Inductive Load

I_CM= 100

Features

(RBSOA)

@ V_CE≤ 600

International Standard Package

P_C

T_C= 25°C

480

miniBLOC

Aluminium Nitride Isolation

T_J

-55 ... +150

150

°C

- High Power Dissipation

^zAnti-Parallel Ultra Fast Diode

T_JM

T_stg

Isolation Voltage 3000 V~

Low V_CE(sat)for Minimum On-State

-55 ... +150

V_ISOL

50/60 Hz

I_ISOL≤ 1 mA

t = 1 min

t = 1 s

2500

3000

Conduction Losses

MOS Gate Turn-on

- Drive Simplicity

Low Collector-to-Case Capacitance

(< 50 pF)

Low Package Inductance (< 5 nH)

M_d

Mounting Torque

Terminal Connection Torque (M4)

1.5/13

1.3/11.5

Nm/lb.in.

Weight

- Easy to Drive and to Protect

Applications

AC Motor Speed Control

DC Servo and Robot Drives

DC Choppers

Uninterruptible Power Supplies (UPS)

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.0

Switch-Mode and Resonant-Mode

V_CE= V_CES

V_GE= 0V

650

μA

Power Supplies

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ±20V

±100

2.5

Advantages

Easy to Mount with 2 Screws

Space Savings

High Power Density

V_CE(sat)

I_C= 50A, V_GE= 15V, Note 1

2.1

1.8

DS99177A(01/09)

12 3 4 5

中文翻译

下载PDF

与IXGN60N60C2D1相关器件

型号	品牌	获取价格	描述	数据表
IXGN72N60A3	IXYS	获取价格	Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4
IXGN72N60A3	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXGN72N60C3H1	IXYS	获取价格	Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4
IXGN72N60C3H1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGN75N60B	IXYS	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4
IXGN75N80	IXYS	获取价格	Transistor
IXGN75N90	IXYS	获取价格	Transistor
IXGN82N120B3H1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGN82N120C3H1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGP10N100	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1KV V(BR)CES \| 20A I(C) \| TO-220AB