Datasheet > IXGN82N120C3H1

IXGN82N120C3H1

更新时间： 2024-11-06 14:56:27

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
3页	171K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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数据手册

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IXGN82N120C3H1 数据手册

Advance Technical Information

GenX3^TM1200V

IGBT w/ Diode

V_CES

I_C110

V_CE(sat)

= 1200V

= 58A

≤£ 3.9V

IXGN82N120C3H1

High-Speed PT IGBT for

20-50 kHz Switching

SOT-227B, miniBLOC

E153432

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

E c

1200

±20

V_CGR

V_GES

V_GEM

I_C25

I_C110

I_F110

Transient

±30

E c

T_C= 25°C

T_C= 110°C

130

G = Gate, C = Collector, E = Emitter

either emitter terminal can be used as

Main or Kelvin Emitter

I_CM

T_C= 25°C, 1ms

500

I_CM= 164

V_CE≤ V_CES

595

SSOA

(RBSOA)

P_C

V_GE= 15V, T_VJ= 125°C, R_G= 3Ω

Clamped Inductive Load

T_C= 25°C

Features

T_J

-55 ... +150

150

°C

^zOptimized for Low Switching Losses

^zSquare RBSOA

^zHigh Current Capability

^zIsolation Voltage 2500 V~

^zAnti-Parallel Ultra Fast Diode

^zInternational Standard Package

T_JM

T_stg

V_ISOL

-55 ... +150

50/60Hz

I_ISOL≤ 1mA

t = 1min

t = 1s

2500

3000

M_d

Mounting Torque

Terminal Connection Torque

1.5/13

1.3/11.5

Nm/lb.in.

Weight

Advantages

^zHigh Power Density

^zLow Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

^zPower Inverters

^zUPS

V_GE(th)

I_CES

I_C= 1mA, V_CE= V_GE

3.0

5.0

V_CE= V_CES, V_GE= 0V, Note 1

50 μA

6 mA

^zSMPS

T_J= 125°C

^zPFC Circuits

^zWelding Machines

^zLamp Ballasts

I_GES

V_CE= 0V, V_GE= ± 20V

±200 nA

V_CE(sat)

I_C= 82A, V_GE= 15V, Note 2

3.3

3.9

DS100171(7/09)

12 3

中文翻译

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