Datasheet > IXGN72N60C3H1

IXGN72N60C3H1

更新时间： 2024-11-25 14:56:31

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	249K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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数据手册

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IXGN72N60C3H1 数据手册

GenX3^TM600V IGBT

with Diode

V_CES

I_C110

= 600V

= 52A

IXGN72N60C3H1

V_CE(sat)

t_fi(typ)

≤£ 2.50V

= 55ns

High-Speed Low-Vsat PT

IGBTs 40-100 kHz Switching

SOT-227B, miniBLOC

E153432

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

E c

600

±20

±30

V_CGR

V_GES

V_GEM

Transient

E c

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

G = Gate, C = Collector, E = Emitter

360

either emitter terminal can be used as

Main or Kelvin Emitter

I_A

T_C= 25°C

E_AS

500

I_CM= 150

@ V_CE≤ V_CES

360

SSOA

(RBSOA)

P_C

V_GE= 15V, T_VJ= 125°C, R_G= 2Ω

Clamped Inductive Load

T_C= 25°C

Features

^zOptimized for Low Switching Losses

^zSquare RBSOA

T_J

-55 ... +150

150

°C

^zAluminium Nitride Isolation

- High Power Dissipation

^zIsolation Voltage 3000V~

^zAvalanche Rated

T_JM

T_stg

V_ISOL

-55 ... +150

50/60Hz

I_ISOL≤ 1mA

t = 1min

t = 1s

2500

3000

^zAnti-Parallel Ultra Fast Diode

^zInternational Standard Package

M_d

Mounting Torque

Terminal Connection Torque

1.5/13

1.3/11.5

Nm/lb.in.

Advantages

Weight

^zHigh Power Density

^zLow Gate Drive Requirement

Applications

Symbol

Test Conditions

Characteristic Values

^zPower Inverters

^zUPS

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

^zMotor Drives

^zSMPS

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.5

V_CE= V_CES, V_GE= 0V

250

μA

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ±20V

±100

V_CE(sat)

I_C= 50A, V_GE= 15V, Note 1

2.10

1.65

2.50

T_J= 125°C

DS100053A(11/09)

12 3 4 5 6 7 8

中文翻译

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