GenX3TM 600V IGBT
with Diode
VCES
IC110
= 600V
= 52A
IXGN72N60C3H1
VCE(sat)
tfi(typ)
≤£ 2.50V
= 55ns
High-Speed Low-Vsat PT
IGBTs 40-100 kHz Switching
SOT-227B, miniBLOC
E153432
Symbol
VCES
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Maximum Ratings
E c
600
600
±20
±30
V
V
V
V
G
VCGR
VGES
VGEM
Transient
E c
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
78
52
A
A
A
C
G = Gate, C = Collector, E = Emitter
360
c
either emitter terminal can be used as
Main or Kelvin Emitter
IA
TC = 25°C
TC = 25°C
50
A
EAS
500
ICM = 150
@ VCE ≤ VCES
360
mJ
SSOA
(RBSOA)
PC
VGE= 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
TC = 25°C
A
Features
z Optimized for Low Switching Losses
z Square RBSOA
W
TJ
-55 ... +150
150
°C
°C
°C
z Aluminium Nitride Isolation
- High Power Dissipation
z Isolation Voltage 3000V~
z Avalanche Rated
TJM
Tstg
VISOL
-55 ... +150
50/60Hz
IISOL ≤ 1mA
t = 1min
t = 1s
2500
3000
V~
V~
z Anti-Parallel Ultra Fast Diode
z International Standard Package
Md
Mounting Torque
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
Advantages
Weight
30
g
z High Power Density
z Low Gate Drive Requirement
Applications
Symbol
Test Conditions
Characteristic Values
z Power Inverters
z UPS
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
z Motor Drives
z SMPS
VGE(th)
ICES
IC = 250μA, VCE = VGE
3.0
5.5
V
VCE = VCES, VGE = 0V
250
3
μA
mA
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
±100
nA
V
VCE(sat)
IC = 50A, VGE = 15V, Note 1
2.10
1.65
2.50
TJ = 125°C
DS100053A(11/09)
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