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IXGP12N100AU1 PDF预览

IXGP12N100AU1

更新时间: 2024-01-09 15:31:17
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页数 文件大小 规格书
4页 119K
描述
IGBT - Combi Pack

IXGP12N100AU1 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:End Of Life零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:N其他特性:HIGH SPEED, FAST
外壳连接:COLLECTOR最大集电极电流 (IC):20 A
集电极-发射极最大电压:1000 V配置:SINGLE WITH BUILT-IN DIODE
最大降落时间(tf):700 ns门极发射器阈值电压最大值:5.5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):900 ns标称接通时间 (ton):100 ns
Base Number Matches:1

IXGP12N100AU1 数据手册

 浏览型号IXGP12N100AU1的Datasheet PDF文件第2页浏览型号IXGP12N100AU1的Datasheet PDF文件第3页浏览型号IXGP12N100AU1的Datasheet PDF文件第4页 
VCES  
IC25  
VCE(sat)  
IGBT  
IXGA/IXGP12N100U1  
1000 V  
24 A  
24 A  
3.5 V  
4.0 V  
Combi Pack  
IXGA/IXGP12N100AU1 1000 V  
Preliminary Data Sheet  
TO-220AB(IXGP)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
G
C
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-263 AA (IXGA)  
IC25  
IC90  
ICM  
TC = 25°C  
24  
12  
48  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
G
E
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 150 W  
Clamped inductive load, L = 300 mH  
ICM = 24  
A
C (TAB)  
(RBSOA)  
@ 0.8 VCES  
PC  
TC = 25°C  
100  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
• Internationalstandardpackages  
JEDEC TO-220AB and TO-263AA  
• IGBT with antiparallel FRED in one  
package  
-55 ... +150  
Md  
Mounting torque with screw M3  
Mounting torque with screw M3.5  
0.45/4 Nm/lb.in.  
0.55/5 Nm/lb.in.  
• Second generation HDMOSTM process  
• Low VCE(sat)  
Weight  
4
g
- forminimumon-stateconduction  
losses  
• MOS Gate turn-on  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
- drive simplicity  
• Fast Recovery Expitaxial Diode (FRED)  
- soft recovery with low IRM  
Symbol  
TestConditions  
CharacteristicValues  
Applications  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switch-modeandresonant-mode  
power supplies  
BVCES  
VGE(th)  
IC = 3 mA, VGE = 0 V  
1000  
2.5  
V
V
IC = 250 mA, VGE = VGE  
5.5  
ICES  
VCE = 0.8, VCES  
VGE= 0 V  
TJ = 25°C  
300  
3
mA  
TJ = 125°C  
mA  
Advantages  
• Easy to mount with one screw  
• Space savings (two devices in one  
package)  
• Reduces assembly time and cost  
• High power density  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
VCE(sat)  
IC = ICE90, VGE = 15  
12N100  
12N100A  
3.5  
4.0  
V
V
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
95592A (3/97)  
1 - 4  

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