Datasheet > IXGN50N120C3H1

IXGN50N120C3H1

更新时间： 2023-12-06 20:13:10

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
7页	217K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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IXGN50N120C3H1 数据手册

IXGN50N120C3H1

Fig. 19. Inductive Turn-on Switching Times vs.

Fig. 18. Inductive Turn-on Switching Times vs.

Gate Resistance

Collector Current

t_d(on)

- - - -

100

180

160

140

120

100

t_{r i}

R_G= 2Ω , V_GE= 15V

_CE= 600V

t_{r i}

t _d(on)- - - -

T_J= 125ºC, V_GE= 15V

V_CE= 600V

T_J= 125ºC, 25ºC

I _C= 80A

I _C= 40A

I_C- Amperes

R_G- Ohms

Fig. 20. Inductive Turn-on Switching Times vs.

Junction Temperature

Fig. 21. Forward Current vs. Forward Voltage

140

120

100

t_{r i}

R_G= 2Ω , V_GE= 15V

_CE= 600V

t_d(on)

- - - -

I _C= 80A

= 125ºC

= 25ºC

I _C= 40A

105

115

125

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

T_J- Degrees Centigrade

V_F- Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: G_50N120C3H1(7N)03-01-10-A

1...3 4 567

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