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IXGN50N60B PDF预览

IXGN50N60B

更新时间: 2024-01-21 18:54:03
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
4页 121K
描述
HiPerFASTTM IGBT

IXGN50N60B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:MINIBLOC-4
针数:4Reach Compliance Code:compliant
风险等级:5.81其他特性:LOW SATURATION VOLTAGE, FAST SWITCHING
外壳连接:ISOLATED最大集电极电流 (IC):75 A
集电极-发射极最大电压:600 V配置:SINGLE
门极-发射极最大电压:20 VJESD-30 代码:R-PUFM-X4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):250 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Nickel (Ni)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):450 ns标称接通时间 (ton):110 ns
VCEsat-Max:2.5 VBase Number Matches:1

IXGN50N60B 数据手册

 浏览型号IXGN50N60B的Datasheet PDF文件第2页浏览型号IXGN50N60B的Datasheet PDF文件第3页浏览型号IXGN50N60B的Datasheet PDF文件第4页 
HiPerFASTTM IGBT  
IXGN 50N60B  
VCES = 600 V  
IC25 = 75 A  
VCE(sat) = 2.5 V  
Preliminary data sheet  
E
Symbol  
TestConditions  
MaximumRatings  
SOT-227B miniBLOC  
E  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
G
TJ = 25°C to 150°C; RGE = 1 MW  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E ꢀ  
IC25  
IC90  
ICM  
TC = 25°C  
75  
50  
A
A
A
C
TC = 90°C  
G = Gate, C = Collector, E = Emitter  
ꢀꢀ Either emitter terminal can be used  
as Main or Kelvin Emitter  
TC = 25°C, 1 ms  
200  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 10 W  
Clamped inductive load, L = 30 mH  
ICM = 100  
@ 0.8 VCES  
A
Features  
PC  
TC = 25°C  
250  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
• Internationalstandardpackage  
SOT-227B  
• Aluminiumnitrideisolation  
- highpowerdissipation  
• Isolationvoltage3000V~  
• Very high current, fast switching IGBT  
• Low VCE(sat) for minimum on-state  
conduction losses  
TJM  
Tstg  
-55 ... +150  
Md  
Mountingtorque  
Terminalconnectiontorque(M4)  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Weight  
30  
g
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
• MOS Gate turn-on drive simplicity  
• Low collector-to-case capacitance  
(< 50 pF)  
• Low package inductance (< 5 nH)  
- easy to drive and to protect  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switch-modeandresonant-mode  
powersupplies  
BVCES  
VGE(th)  
IC = 250 mA, VGE = 0 V  
IC = 250 mA, VCE = VGE  
600  
2.5  
V
5
V
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
200  
1
mA  
mA  
Advantages  
TJ = 125°C  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
• Easy to mount with 2 screws  
• Space savings  
• High power density  
VCE(sat)  
IC = IC90, VGE = 15 V  
2.5  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
97531A(7/00)  
1 - 4  

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