是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | MINIBLOC-4 |
针数: | 4 | Reach Compliance Code: | compliant |
风险等级: | 5.81 | 其他特性: | FAST |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 75 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PUFM-X4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 250 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Nickel (Ni) | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 200 ns | 标称接通时间 (ton): | 50 ns |
VCEsat-Max: | 2.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGN60N60 | IXYS |
获取价格 |
Ultra-Low VCE(sat) IGBT | |
IXGN60N60C2 | IXYS |
获取价格 |
HiPerFASTTM IGBTs with Diode | |
IXGN60N60C2D1 | IXYS |
获取价格 |
HiPerFASTTM IGBTs with Diode | |
IXGN72N60A3 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4 | |
IXGN72N60A3 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IXGN72N60C3H1 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4 | |
IXGN72N60C3H1 | LITTELFUSE |
获取价格 |
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGN75N60B | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4 | |
IXGN75N80 | IXYS |
获取价格 |
Transistor | |
IXGN75N90 | IXYS |
获取价格 |
Transistor |