Datasheet > IXGN50N120C3H1

IXGN50N120C3H1

更新时间： 2023-12-06 20:13:10

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
7页	217K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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IXGN50N120C3H1 数据手册

IXGN50N120C3H1

Fig. 13. Inductive Switching Energy Loss vs.

Collector Current

Fig. 12. Inductive Switching Energy Loss vs.

Gate Resistance

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

_on- - - -

V_GE= 15V

off

R_G= 2

_on- - - -

off

T_J= 125ºC , V_GE= 15V

_CE= 600V

Ω ,

V_CE= 600V

T_J= 125ºC

I _C= 80A

T_J= 25ºC

I _C= 40A

R_G- Ohms

I_C- Amperes

Fig. 15. Inductive Turn-off Switching Times vs.

Gate Resistance

Fig. 14. Inductive Switching Energy Loss vs.

Junction Temperature

500

450

400

350

300

250

200

150

100

600

550

500

450

400

350

300

250

200

150

100

4.0

3.6

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0

t _{f i}

t _d(off)

- - - -

_on- - - -

off

R_G= 2Ω V_GE= 15V

T_J= 125ºC, _GE= 15V

V_CE= 600V

I _C= 80A

I _C= 40A

I _C= 80A

10 11 12 13 14 15

105

115

125

R_G- Ohms

T_J- Degrees Centigrade

Fig. 16. Inductive Turn-off Switching Times vs.

Collector Current

Fig. 17. Inductive Turn-off Switching Times vs.

Junction Temperature

450

400

350

300

250

200

150

100

260

350

300

250

200

150

100

180

170

160

150

140

130

120

110

t_{f i}

R_G= 2Ω , V_GE= 15V

_CE= 600V

t_d(off)

- - - -

t _{f i}

t_d(off)

- - - -

240

220

200

180

160

140

120

100

R_G= 2Ω , V_GE= 15V

= 40A

V_CE= 600V

T_J= 125ºC

I _C= 80A

T_J= 25ºC

105

115

125

I_C- Amperes

T_J- Degrees Centigrade

1 2 3 456 7

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