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IXGN50N120C3H1 PDF预览

IXGN50N120C3H1

更新时间: 2023-12-06 20:13:10
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
7页 217K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGN50N120C3H1 数据手册

 浏览型号IXGN50N120C3H1的Datasheet PDF文件第1页浏览型号IXGN50N120C3H1的Datasheet PDF文件第3页浏览型号IXGN50N120C3H1的Datasheet PDF文件第4页浏览型号IXGN50N120C3H1的Datasheet PDF文件第5页浏览型号IXGN50N120C3H1的Datasheet PDF文件第6页浏览型号IXGN50N120C3H1的Datasheet PDF文件第7页 
IXGN50N120C3H1  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B miniBLOC (IXGN)  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 40A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
24  
40  
S
Cies  
Coes  
Cres  
4250  
455  
pF  
pF  
pF  
120  
Qg  
196  
24  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 VCES  
84  
td(on)  
tri  
Eon  
td(off)  
tfi  
31  
36  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
2.0  
123  
64  
IC = 40A, VGE = 15V  
VCE = 0.5 VCES, RG = 2Ω  
Note 2  
Eoff  
0.63  
1.2 mJ  
td(on)  
tri  
23  
37  
ns  
ns  
Inductive load, TJ = 125°C  
Eon  
td(off)  
tfi  
3.0  
170  
315  
2.1  
mJ  
ns  
IC = 40A, VGE = 15V  
VCE = 0.5 VCES, RG = 2Ω  
Note 2  
ns  
Eoff  
mJ  
RthJC  
RthCK  
0.27 °C/W  
°C/W  
0.05  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 50A, VGE = 0V, Note 1  
2.1  
2.4  
2.3  
V
V
TJ = 125°C  
IRM  
50  
75  
A
IF = 50A, VGE = 0V,  
-diF/dt = 2500A/μs, VR = 800V  
trr  
ns  
0.30 °C/W  
RthJC  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  

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