IXGN50N120C3H1
Symbol
Test Conditions
Characteristic Values
SOT-227B miniBLOC (IXGN)
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 40A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
24
40
S
Cies
Coes
Cres
4250
455
pF
pF
pF
120
Qg
196
24
nC
nC
nC
Qge
Qgc
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
84
td(on)
tri
Eon
td(off)
tfi
31
36
ns
ns
mJ
ns
ns
Inductive load, TJ = 25°C
2.0
123
64
IC = 40A, VGE = 15V
VCE = 0.5 • VCES, RG = 2Ω
Note 2
Eoff
0.63
1.2 mJ
td(on)
tri
23
37
ns
ns
Inductive load, TJ = 125°C
Eon
td(off)
tfi
3.0
170
315
2.1
mJ
ns
IC = 40A, VGE = 15V
VCE = 0.5 • VCES, RG = 2Ω
Note 2
ns
Eoff
mJ
RthJC
RthCK
0.27 °C/W
°C/W
0.05
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 50A, VGE = 0V, Note 1
2.1
2.4
2.3
V
V
TJ = 125°C
IRM
50
75
A
IF = 50A, VGE = 0V,
-diF/dt = 2500A/μs, VR = 800V
trr
ns
0.30 °C/W
RthJC
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537