Datasheet > IXGN120N60A3

IXGN120N60A3

更新时间： 2024-02-11 14:10:19

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
4页	839K
描述
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

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IXGN120N60A3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PUFM-X4
针数：	4	Reach Compliance Code：	compliant
风险等级：	5.64	其他特性：	LOW CONDUCTION LOSS, UL RECOGNIZED
外壳连接：	ISOLATED	最大集电极电流 (IC)：	200 A
集电极-发射极最大电压：	600 V	配置：	SINGLE
门极-发射极最大电压：	20 V	JESD-30 代码：	R-PUFM-X4
元件数量：	1	端子数量：	4
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	595 W	认证状态：	Not Qualified
子类别：	Insulated Gate BIP Transistors	表面贴装：	NO
端子面层：	Nickel (Ni)	端子形式：	UNSPECIFIED
端子位置：	UPPER	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	POWER CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	830 ns	标称接通时间 (ton)：	123 ns
VCEsat-Max：	1.35 V	Base Number Matches：	1

IXGN120N60A3 数据手册

IXYS

POWER

ꢀ ꢁ w p r o D u c T B r I ꢁ f

Efficiency through T e chnology

600V GenX3™ IGBTs

ꢀꢁXT GꢁꢀꢁraTIoꢀ 600V IGBTꢂ for powꢁr coꢀVꢁrꢂIoꢀ applIcaTIoꢀꢂ

jaꢀuary 2009

oVꢁrVIꢁw

IXYS extends its GenX3^TMinsulated gate bipolar transistor (IGBT) product line to

600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3^TM

IGBT process and uꢀlize IXYS’ advanced Punch-Though (PT) technology, tailored

to provide higher surge current capabiliꢀes, lower saturaꢀon voltages, and lower

switching losses.

To accommodate opꢀmum part selecꢀon, designers have a choice in selecꢀng

between three sub-classes denoted A3, B3, and C3. These classiﬁcaꢀons allow

designers to “dial in” the best compromise between staꢀc (conducꢀon) and

dynamic (switching) losses, improving over-all system eﬃciency in a variety of

power conversion applicaꢀons by balancing criꢀcal requirements such as switching

frequency, eﬃciency, and cost structure. The A3-Class are opꢀmized for low

saturaꢀon voltage V(sat) and are well suited for applicaꢀons requiring switching

frequencies up to 5kHz. Similarly, the B3-Class oﬀers low saturaꢀon voltages, but

is opꢀmized to accommodate applicaꢀons that require “medium speed” switching

operaꢀon from 5kHz to 40kHz. The C3-Class is opꢀmized for “high speed” switching

operaꢀon from 40kHz to 100kHz and resonant switching operaꢀon of up to

400kHz.

IXYS 600V GenX3^TMIGBTs are oﬀered in various standard packages, including the

full gamut of surface mount and discrete packages with current raꢀngs from 36

amperes to 210 amperes. Furthermore, some devices will be oﬀered in PLUS and

ISOPLUS isolated packages, featuring UL recognized 2500V isolaꢀon and superior

thermal performance. Co-Packed variants of these new devices are available with

IXYS’ HiPerFRED^TMultra-fast recovery diodes providing excepꢀonal fast recovery

and soꢁ switching characterisꢀcs.

These IGBTs are designed to achieve the opꢀmal soluꢀon in applicaꢀons such as

power inverters, UPS, motor drives, SMPS, PFC, baꢂery chargers, welding machines,

lamp ballasts, inrush current protecꢀon circuits and DC choppers.

ꢃꢃꢃ.ixꢄs.ꢅꢆm

12 3 4

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与IXGN120N60A3相关器件

型号	品牌	获取价格	描述	数据表
IXGN120N60A3D1	IXYS	获取价格	600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
IXGN120N60A3D1	LITTELFUSE	获取价格	IXYS系列穿通型（PT）IGBT具有高增益、极快速切换和低传导损耗等优点。这些产品针对
IXGN200N170	LITTELFUSE	获取价格	功能与特色: 应用:?
IXGN200N60	IXYS	获取价格	HiPerFAST IGBT
IXGN200N60A	IXYS	获取价格	HiPerFAST IGBT
IXGN200N60A2	IXYS	获取价格	Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4
IXGN200N60B	IXYS	获取价格	HiPerFASTTM IGBT
IXGN200N60B3	IXYS	获取价格	600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
IXGN200N60B3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGN320N60A3	IXYS	获取价格	600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

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