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IXGN200N60B3 PDF预览

IXGN200N60B3

更新时间: 2024-11-06 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
7页 212K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGN200N60B3 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.71
Base Number Matches:1

IXGN200N60B3 数据手册

 浏览型号IXGN200N60B3的Datasheet PDF文件第2页浏览型号IXGN200N60B3的Datasheet PDF文件第3页浏览型号IXGN200N60B3的Datasheet PDF文件第4页浏览型号IXGN200N60B3的Datasheet PDF文件第5页浏览型号IXGN200N60B3的Datasheet PDF文件第6页浏览型号IXGN200N60B3的Datasheet PDF文件第7页 
GenX3TM 600V IGBT  
VCES = 600V  
IC110 = 200A  
VCE(sat) 1.50V  
IXGN200N60B3  
Medium-Speed Low-Vsat PT  
IGBT for 5-40kHz Switching  
SOT-227B, miniBLOC  
E153432  
E c  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
G
600  
600  
±20  
±30  
V
V
V
V
VCGR  
VGES  
E c  
VGEM  
Transient  
C
IC25  
TC = 25°C  
300  
200  
A
A
A
A
IC110  
ILRMS  
ICM  
TC = 110°C  
G = Gate, C = Collector, E = Emitter  
c
Either Emitter Terminal can be used as  
Main or Kelvin Emitter  
Terminal Current Limit  
TC = 25°C, 1ms  
200  
1200  
SSOA  
(RBSOA)  
PC  
VGE= 15V, TVJ = 125°C, RG = 1Ω  
Clamped Inductive Load  
TC = 25°C  
ICM = 300  
VCE VCES  
830  
A
Features  
W
°C  
°C  
°C  
z International Standard Package  
miniBLOC  
z UL Recognized  
TJ  
- 55 ... +150  
150  
TJM  
z Aluminium Nitride Isolation  
- High Power Dissipation  
z Isolation Voltage 3000 V~  
z Very High Current IGBT  
z Low VCE(sat) for Minimum on-state  
Conduction Losses  
Tstg  
- 55 ... +150  
VISOL  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque (M4)  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z MOS Gate Turn-On  
- Drive Simplicity  
Weight  
30  
g
z Low Collector-to-Case Capacitance  
(< 50 pF)  
z Low Package Inductance (< 5 nH)  
- Easy to Drive and to Protect  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
z High Power Density  
z Low Gate Drive Requirement  
VCE = VCES, VGE = 0V  
50 μA  
TJ = 125°C  
5 mA  
Applications  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
IC = 200A,  
1.35 1.50  
1.65  
1.75  
V
V
V
Switch-Mode and Resonant-Mode  
Power Supplies  
TJ = 125°C  
Uninterruptible Power Supplies (UPS)  
DC Choppers  
AC Motor Speed Drives  
DC Servo and Robot Drives  
DS99941B(8/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

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