Advance Technical Information
GenX3TM 1200V
IGBT w/ Diode
VCES
IC110
VCE(sat)
= 1200V
= 50A
≤£ 4.2V
IXGN50N120C3H1
High-Speed PT IGBT for
20-50 kHz Switching
SOT-227B, miniBLOC
E153432
Symbol
VCES
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Maximum Ratings
E c
1200
1200
±20
±30
95
V
V
V
V
A
G
VCGR
VGES
VGEM
IC25
IC110
IF110
Transient
E c
TC = 25°C
TC = 110°C
TC = 110°C
C
50
58
A
A
G = Gate, C = Collector, E = Emitter
c
either emitter terminal can be used as
Main or Kelvin Emitter
ICM
TC = 25°C, 1ms
240
ICM = 100
VCE ≤ VCES
460
A
SSOA
(RBSOA)
PC
VGE= 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
TC = 25°C
A
W
Features
TJ
-55 ... +150
150
°C
°C
°C
z Optimized for Low Switching Losses
z Square RBSOA
z High Current Capability
z Isolation Voltage 2500V~
z Anti-Parallel Ultra Fast Diode
z International Standard Package
TJM
Tstg
VISOL
-55 ... +150
50/60Hz
IISOL ≤ 1mA
t = 1min
t = 1s
2500
3000
V~
V~
Md
Mounting Torque
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
Weight
30
g
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
Symbol
Test Conditions
Characteristic Values
z Power Inverters
z UPS
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
z SMPS
VGE(th)
ICES
IC = 250μA, VCE = VGE
3.0
5.0
V
z PFC Circuits
z Welding Machines
z Lamp Ballasts
VCE = VCES, VGE= 0V
250 μA
TJ = 125°C
14 mA
IGES
VCE = 0V, VGE = ±20V
±100 nA
VCE(sat)
IC
= 40A, VGE = 15V, Note 1
TJ = 125°C
4.2
V
V
2.6
DS100246(03/10)
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