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IXGN120N60A3D1 PDF预览

IXGN120N60A3D1

更新时间: 2024-12-01 14:56:43
品牌 Logo 应用领域
力特 - LITTELFUSE 超快恢复二极管开关双极性晶体管
页数 文件大小 规格书
8页 228K
描述
IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对UPS、离线式开关电源和电磁炉等高达100kHz的高速应用进行了优化。 G系列可提供带集成式超快恢复二极管(FRED)或不带FRED的型号。

IXGN120N60A3D1 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.67
Base Number Matches:1

IXGN120N60A3D1 数据手册

 浏览型号IXGN120N60A3D1的Datasheet PDF文件第2页浏览型号IXGN120N60A3D1的Datasheet PDF文件第3页浏览型号IXGN120N60A3D1的Datasheet PDF文件第4页浏览型号IXGN120N60A3D1的Datasheet PDF文件第5页浏览型号IXGN120N60A3D1的Datasheet PDF文件第6页浏览型号IXGN120N60A3D1的Datasheet PDF文件第7页 
GenX3TM 600V IGBT  
VCES = 600V  
IC110 = 120A  
VCE(sat) 1.35V  
IXGN120N60A3  
IXGN120N60A3D1  
Ultra-low Vsat PT IGBTs for up to  
5kHz switching  
SOT-227B, miniBLOC  
E153432  
E ꢁ  
E
60A3  
60A3D1  
G
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
600  
600  
±20  
±30  
V
V
V
V
E ꢁ  
VCGR  
C
VGES  
G = Gate, C = Collector, E = Emitter  
VGEM  
Transient  
Either Emitter Terminal can be used as  
Main or Kelvin Emitter  
IC25  
IC110  
IF110  
ICM  
TC = 25°C  
TC = 110°C  
200  
120  
36  
A
A
A
A
Features  
TC = 110°C  
IXGN120N60A3D1  
TC = 25°C, 1ms  
800  
Optimized for Low Conduction  
Losses  
SSOA  
(RBSOA)  
PC  
VGE= 15V, TVJ = 125°C, RG = 1.5Ω  
Clamped Inductive Load  
TC = 25°C  
ICM = 200  
A
V
Square RBSOA  
@ VCES < 600  
Anti-Parallel Ultra Fast Diode  
International Standard Package  
595  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
miniBLOC  
UL Recognized  
Aluminium Nitride Isolation  
Isolation Voltage 3000 V~  
TJM  
Tstg  
VISOL  
-55 ... +150  
Low VCE(sat) for Minimum On-State  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque (M4)  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
High Power Density  
Low Gate Drive Requirement  
Weight  
30  
g
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Power Inverters  
UPS  
VGE(th)  
ICES  
IC = 500μA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES, VGE = 0V, Note 3 120N60A3  
120N60A3D1  
50 μA  
650 μA  
1 mA  
Motor Drives  
SMPS  
PFC Circuits  
TJ = 125°C  
120N60A3  
120N60A3D1  
5 mA  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
Inrush Current Protection Circuits  
IGES  
VCE = 0V, VGE = ±20V  
±400 nA  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
1.20 1.35  
V
High Power Density  
DS99927B(02/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

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