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IXGN200N170 PDF预览

IXGN200N170

更新时间: 2023-12-06 20:13:09
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 227K
描述
功能与特色: 应用:?

IXGN200N170 数据手册

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Advance Technical Information  
High Voltage  
IGBT  
VCES = 1700V  
IC90 = 160A  
IXGN200N170  
VCE(sat)  2.6V  
tfi(typ) = 535ns  
E
SOT-227B, miniBLOC  
E153432  
E  
Symbol  
Test Conditions  
Maximum Ratings  
G
VCES  
VCGR  
TJ = 25°C to 150°C  
1700  
1700  
V
V
TJ = 25°C to 150°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E   
C
IC25  
TC = 25°C (Chip Capability)  
280  
A
ILRMS  
IC90  
ICM  
Terminal Current Limit  
TC = 90°C  
200  
160  
A
A
G = Gate, C = Collector, E = Emitter  
either emitter terminal can be used as  
Main or Kelvin Emitter  
TC = 25°C, 1ms  
1050  
A
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 1  
Clamped Inductive Load  
ICM = 300  
1360  
A
V
PC  
TC = 25°C  
1250  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
miniBLOC, with Aluminium Nitride  
-55 ... +150  
Isolation  
International Standard Package  
Isolation Voltage 2500V~  
High Current Handling Capability  
VISOL  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
1.5/13  
Nm/lb.in  
Terminal Connection Torque  
1.3/11.5  
Nm/lb.in  
Weight  
30  
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1700  
3.5  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Welding Machines  
BVCES  
VGE(th)  
ICES  
IC = 3mA, VGE = 0V  
IC = 1mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.5  
25 A  
mA  
200 nA  
TJ = 125C  
5
IGES  
VCE = 0V, VGE = 20V  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
TJ = 125C  
2.1  
2.5  
2.6  
V
V
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100718(4/16)  

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