Datasheet > IXGN400N60B3

IXGN400N60B3

更新时间： 2024-09-30 14:56:43

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
7页	208K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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数据手册

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IXGN400N60B3 数据手册

GenX3^TM600V IGBT

V_CES= 600V

I_C25= 430A

V_CE(sat) 1.50V

IXGN400N60B3

Medium-Speed Low-Vsat PT

IGBT for 5-40 kHz Switching

SOT-227B, miniBLOC

E153432

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25C to 150C

600

E 

T_J= 25C to 150C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

± 20

± 30

I_C25

T_C= 25C (Chip Capability)

T_C= 110C

Terminal Current Limit

430

200

E 

I_C110

I_LRMS

I_CM

200

G = Gate, C = Collector, E = Emitter

T_C= 25C, 1ms

1500



either emitter terminal can be used as

Main or Kelvin Emitter

SSOA

V_GE= 15V, T_VJ= 125C, R_G= 1

I_CM= 400

(RBSOA)

Clamped Inductive Load

@ V_CE< V_CES

Features

P_C

T_J

T_C= 25C

1000

^Optimized for Low Conduction and

Switching Losses

-55 ... +150

C

T_JM

T_stg

150

-55 ... +150

C

^Square RBSOA

^High Current Capability

^Isolation Voltage 3000 V~

^International Standard Package

V_ISOL

50/60Hz

I_ISOL1mA

t = 1min

t = 1s

2500

3000

M_d

Mounting Torque

Terminal Connection Torque (M4)

1.5/13

1.3/11.5

Nm/lb.in

Advantages

Weight

^High Power Density

^Low Gate Drive Requirement

Applications

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

600

3.0

Typ.

Max.

^Power Inverters

^UPS

BV_CES

V_GE(th)

I_CES

I_C= 1mA, V_GE= 0V

I_C= 8mA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

^Motor Drives

^SMPS

5.0

100 μA

^PFC Circuits

^Battery Chargers

^Welding Machines

^Lamp Ballasts

T_J= 125C

4 mA

I_GES

V_CE= 0V, V_GE= ± 20V

±400 nA

V_CE(sat)

I_C= 100A, V_GE= 15V, Note 1

I_C= 400A

1.25

1.80

1.50

DS100156B(10/15)

12 3 4 5 6 7

中文翻译

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