Datasheet > IXFK14N100Q

IXFK14N100Q

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	145K
描述
Power Field-Effect Transistor, 14A I(D), 1000V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3

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IXFK14N100Q 数据手册

IXFH 14N100Q IXFK 14N100Q

IXFT 14N100Q

TO-247 AD (IXFH) Outline

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_DS= 10 V; I_D= 0.5 I_D25, pulse test

Terminals:

1 - Gate

C_iss

C_oss

C_rss

4500

410

2 - Drain

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

3 - Source

Tab - Drain

150

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 0.5 I_D25

Dim.

Millimeter

Inches

R_G= 2.0 Ω (External),

Min.

Max.

Min.

Max.

4.7

2.2

5.3

2.54

2.6

.185

.087

.059

.209

.102

.098

Q_g(on)

Q_gs

130 170 nC

1.0

1.65

2.87

1.4

2.13

3.12

.040

.065

.113

.055

.084

.123

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 0.5 I_D25

Q_gd

20.80

15.75

21.46

16.26

.016

.819

.610

.031

.845

.640

R_thJC

R_thCK

0.35 K/W

5.20

5.72

20.32

4.50

0.205

.780

0.225

.800

.177

19.81

TO-247

TO-264

0.25

0.15

K/W

P3.55

3.65

.140

.144

5.89

6.40

0.232

0.252

.216

4.32

5.49

.170

6.15 BSC

242 BSC

Source-DrainDiode

Characteristic Values

(T_J= 25°C, unless otherwise specified)

TO-264 AA Outline

Symbol

I_S

TestConditions

min.

typ. max.

V_GS= 0 V

I_SM

Repetitive; pulse width limited by T_JM

V_SD

I_F= I_S, V_GS= 0 V,

1.5

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t_rr

Q_RM

I_RM

250

µC

I_F= I_S-di/dt = 100 A/µs, V_R= 100 V

Millimeter

Dim.

Inches

Max.

.202

Min.

Max.

Min.

.190

4.82

2.54

2.00

5.13

2.89

2.10

.100

.079

.114

.083

TO-268 Outline

1.12

2.39

2.90

1.42

2.69

3.09

.044

.094

.114

.056

.106

.122

0.53

25.91

19.81

0.83

26.16

19.96

.021

1.020

.780

.033

1.030

.786

5.46BSC

.215BSC

0.00

0.25

.000

.010

20.32

2.29

20.83

2.59

.800

.090

.820

.102

P3.17

3.66

.125

.144

6.07

8.38

6.27

8.69

.239

.330

.247

.342

3.81

1.78

4.32

2.29

.150

.070

.170

.090

6.04

1.57

6.30

1.83

.238

.062

.248

.072

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106

4,850,072 4,931,844

5,017,508

5,034,796

5,049,961 5,187,117 5,486,715

5,063,307 5,237,481 5,381,025

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