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IXFH170N10P PDF预览

IXFH170N10P

更新时间: 2024-11-05 11:13:59
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页数 文件大小 规格书
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描述
Polar HiperFET Power MOSFET

IXFH170N10P 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-247AD包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:4.3
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):2000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):170 A最大漏极电流 (ID):170 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):715 W最大脉冲漏极电流 (IDM):350 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFH170N10P 数据手册

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PolarTM HiperFETTM  
Power MOSFET  
VDSS = 100V  
ID25 = 170A  
RDS(on) 9mΩ  
150ns  
IXFH170N10P  
IXFK170N10P  
trr  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-247 (IXFH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
Tab  
TJ = 25°C to 175°C  
100  
100  
V
V
V
V
VDGR  
TJ = 25°C to 175°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
TO-264 (IXFK)  
ID25  
IL(RMS)  
TC = 25°C  
External Lead Current Limit  
170  
160  
A
A
IDM  
TC = 25°C, Pulse Width Limited by TJM  
350  
A
G
IA  
TC = 25°C  
TC = 25°C  
60  
2
A
J
Tab  
D
S
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 175°C  
10  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
TC = 25°C  
715  
Tab = Drain  
TJ  
-55 to +175  
+175  
°C  
°C  
°C  
TJM  
Tstg  
-55 to +175  
Features  
TL  
1.6mm (0.063in) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z International Standard Packages  
z Fast Intrinsic Rectifier  
z Avalanche Rated  
TSOLD  
Md  
Mounting Torque  
1.13/10  
Nm/lb.in.  
z Low RDS(ON) and QG  
Weight  
TO-247  
TO-264  
6
10  
g
g
z Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z High Power Density  
z Easy to Mount  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
100  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 4mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z Space Savings  
5.0  
±100 nA  
Applications  
IDSS  
25 μA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
TJ = 150°C  
500 μA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 15V, ID = 350A  
9 mΩ  
mΩ  
z DC-DC Converters  
7
z Laser Drivers  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
DS99380F(01/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  

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