Datasheet > IXFH20N80Q

IXFH20N80Q

更新时间： 2024-11-19 14:56:43

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
3页	228K
描述
功能与特色: 应用: 优点:

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中文翻译

获取价格

数据手册

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IXFH20N80Q 数据手册

HiPerFET^TM

PowerMOSFETs

Q-Class

IXFH20N80Q

IXFK20N80Q

IXFT20N80Q

V_DSS

I_D25

= 800 V

20 A

R_DS(on)= 0.42 Ω

N-ChannelEnhancementMode

AvalancheRated,

t_rr≤ 250 ns

Low Q_g,High dv/dt

PreliminaryData

TO-247 AD (IXFH)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

800

(TAB)

V_GS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

TO-268 (D3) ( IXFT)

E_AR

E_AS

T_C= 25°C

1.5

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

V/ns

T_J≤ 150°C, R_G= 2 Ω

TO-264 AA (IXFK)

P_D

T_C= 25°C

360

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

D (TAB)

T_L

1.6 mm (0.063 in) from case for 10 s

Mounting torque

300

°C

G = Gate

M_d

TO-247

TO-264

1.13/10 Nm/lb.in.

0.9/6 Nm/lb.in.

S = Source

TAB = Drain

Weight

Symbol

TO-247

TO-268

TO-264

Features

^zIXYS advanced low Q_gprocess

TestConditions

Characteristic Values

^zInternational standard packages

(T_J= 25°C, unless otherwise specified)

Epoxy meet UL 94 V-0, flammability

min. typ. max.

classification

^zLow R_{DS (on)}low Q_g

V_DSS

V_GS= 0 V, I_D= 250 µA

800

2.5

^zAvalanche energy and current rated

^zFast intrinsic rectifier

V_GS(th)

V_DS= V_GS, I_D= 4 mA

4.5

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

25 µA

Advantages

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Easy to mount

Space savings

High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

0.42

Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

DS98616A(12/02)

12 3

中文翻译

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