5秒后页面跳转
IXFH20N50P3 PDF预览

IXFH20N50P3

更新时间: 2024-11-05 21:09:55
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 162K
描述
Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN

IXFH20N50P3 技术参数

生命周期:Transferred零件包装代码:TO-247AD
包装说明:TO-247, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:4.45其他特性:AVALANCHE RATED
雪崩能效等级(Eas):300 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):20 A最大漏极电流 (ID):20 A
最大漏源导通电阻:0.3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):380 W最大脉冲漏极电流 (IDM):40 A
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFH20N50P3 数据手册

 浏览型号IXFH20N50P3的Datasheet PDF文件第2页浏览型号IXFH20N50P3的Datasheet PDF文件第3页浏览型号IXFH20N50P3的Datasheet PDF文件第4页浏览型号IXFH20N50P3的Datasheet PDF文件第5页浏览型号IXFH20N50P3的Datasheet PDF文件第6页 
Preliminary Technical Information  
Polar3TM HiperFETTM  
Power MOSFETs  
VDSS = 500V  
ID25 = 20A  
RDS(on) 300m  
IXFA20N50P3  
IXFP20N50P3  
IXFQ20N50P3  
IXFH20N50P3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-220AB (IXFP)  
Fast Intrinsic Rectifier  
TO-263 AA (IXFA)  
G
G
S
D
D (Tab)  
S
TO-3P (IXFQ)  
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
500  
500  
V
V
VDGR  
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
TO-247 (IXFH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
20  
40  
A
A
IA  
TC = 25C  
TC = 25C  
10  
A
G
D
S
EAS  
300  
mJ  
D (Tab)  
D = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
35  
V/ns  
W
380  
G = Gate  
S = Source  
Tab = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +150  
Fast Intrinsic Rectifier  
Avalanche Rated  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Low RDS(ON) and QG  
FC  
Md  
Mounting Force  
Mounting Torque  
10..65/2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Low Package Inductance  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
TO-247  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1.5mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
5.0  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
          100 nA  
IDSS  
25 A  
Laser Drivers  
AC and DC Motor Drives  
Robotics and Servo Controls  
TJ = 125C  
1.25 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
300 m  
DS100414A(11/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

IXFH20N50P3 替代型号

型号 品牌 替代类型 描述 数据表
IXFA20N50P3 IXYS

功能相似

Power MOSFET

与IXFH20N50P3相关器件

型号 品牌 获取价格 描述 数据表
IXFH20N60 IXYS

获取价格

HiPerFET Power MOSFETs
IXFH20N60 LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFH20N60Q IXYS

获取价格

HiPerFET Power MOSFETs Q-Class
IXFH20N60Q LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFH20N80P IXYS

获取价格

PolarHV HiPerFET Power MOSFET
IXFH20N80P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFH20N80Q IXYS

获取价格

HiPerFETTM Power MOSFETs Q-Class
IXFH20N80Q LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFH20N85X IXYS

获取价格

Power Field-Effect Transistor
IXFH20N85X LITTELFUSE

获取价格

Power Field-Effect Transistor,