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IXFH21N50Q PDF预览

IXFH21N50Q

更新时间: 2023-12-06 20:13:17
品牌 Logo 应用领域
力特 - LITTELFUSE /
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5页 638K
描述
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IXFH21N50Q 数据手册

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HiPerFETTM  
Power MOSFETs  
Q-Class  
IXFH 21N50Q  
IXFT 21N50Q  
VDSS  
ID25  
= 500 V  
= 21 A  
RDS(on) = 0.25 Ω  
trr 250 ns  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, High dv/dt  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
500  
500  
V
V
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
(TAB)  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
21  
84  
21  
A
A
A
TO-268 (D3) ( IXFT)  
EAR  
EAS  
TC = 25°C  
30  
mJ  
mJ  
1.5  
G
(TAB)  
S
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
,
15  
V/ns  
TJ 150°C, RG = 2 Ω  
G = Gate  
D
= Drain  
PD  
TC = 25°C  
280  
W
S = Source TAB = Drain  
TJ  
TJM  
Tstg  
-55 to +150  
150  
-55 to +150  
°C  
°C  
°C  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mounting torque  
300  
°C  
Features  
Md  
1.13/10 Nm/lb.in.  
l IXYS advanced low Qg process  
l Low gate charge and capacitances  
- easier to drive  
Weight  
TO-247  
TO-268  
6
4
g
g
- faster switching  
l International standard packages  
l Low RDS (on)  
Symbol  
TestConditions  
Characteristic Values  
l Rated for unclamped Inductive load  
switching (UIS) rated  
(TJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
l Molding epoxies meet UL 94 V-0  
flammability classification  
VDSS  
VGS(th)  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
500  
2.5  
V
V
4.5  
IGSS  
IDSS  
VGS = 30 VDC, VDS = 0  
100  
nA  
Advantages  
VDS = V  
T
= 25°C  
25  
1
µA  
VGS = 0DVSS  
TJJ = 125°C  
mA  
l
Easy to mount  
Space savings  
l
RDS(on)  
V
= 10 V, ID = 0.5 ID25  
0.25  
PGuSlse test, t 300 µs, duty cycle d 2 %  
l
High power density  
© 2004 IXYS All rights reserved  
98718B(02/04)  

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