5秒后页面跳转
IXFH21N50 PDF预览

IXFH21N50

更新时间: 2024-11-06 14:56:39
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 738K
描述
功能与特色: 应用: 优点:

IXFH21N50 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:TO-247AD, 3 PINReach Compliance Code:compliant
风险等级:5.35外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):21 A最大漏极电流 (ID):21 A
最大漏源导通电阻:0.25 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:300 W
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):84 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFH21N50 数据手册

 浏览型号IXFH21N50的Datasheet PDF文件第2页浏览型号IXFH21N50的Datasheet PDF文件第3页浏览型号IXFH21N50的Datasheet PDF文件第4页浏览型号IXFH21N50的Datasheet PDF文件第5页 
VDSS ID25 RDS(on)  
HiPerFETTM  
Power MOSFETs  
IXFH/IXFM21N50  
IXFH/IXFM/IXFT24N50  
IXFH/IXFT26N50  
500 V 21 A 0.25 Ω  
500 V 24 A 0.23 Ω  
500 V 26 A 0.20 Ω  
N-ChannelEnhancementMode  
Highdv/dt, Lowtrr, HDMOSTM Family  
t 250 ns  
rr  
Obsolete:  
IXFM21N50  
IXFM24N50  
TO-247 AD (IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
(TAB)  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
TO-268 (D3) Case Style  
ID25  
IDM  
IAR  
TC = 25°C  
21N50  
24N50  
26N50  
21N50  
24N50  
26N50  
21N50  
21  
24  
26  
84  
96  
104  
21  
24  
A
A
A
A
A
A
A
A
A
G
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
S
(TAB)  
TO-204 AE (IXFM)  
24N50  
.
Package not  
available  
26N50  
26  
EAR  
TC = 25°C  
30  
5
mJ  
G
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
V/ns  
D
G = Gate,  
D = Drain,  
S = Source,  
TAB = Drain  
PD  
TC = 25°C  
300  
W
Features  
• International standard packages  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
• Low R  
HDMOSTM process  
-55 ... +150  
• RuggeDdS (pono)lysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
• Low package inductance  
- easy to drive and to protect  
• Fast intrinsic Rectifier  
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-204 = 18 g, TO-247 = 6 g  
Applications  
• DC-DC converters  
• Synchronous rectification  
• Battery chargers  
• Switched-mode and resonant-mode  
power supplies  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• DC choppers  
• AC motor control  
• Temperature and lighting controls  
• Low voltage relays  
VDSS  
VGS = 0 V, ID = 250 µA  
500  
2
V
V
VGS(th)  
VDS = VGS, ID = 4 mA  
4
Advantages  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
200 µA  
• Easy to mount with 1 screw (TO-247)  
(isolated mounting screw hole)  
• High power surface mountable package  
• High power density  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
1
mA  
© 1999 IXYS All rights reserved  
91525H (9/99)  

与IXFH21N50相关器件

型号 品牌 获取价格 描述 数据表
IXFH21N50F IXYS

获取价格

HiPerRF Power MOSFETs
IXFH21N50Q IXYS

获取价格

HiPerFET Power MOSFETs MOSFETs
IXFH21N50Q LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFH21N50S IXYS

获取价格

Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
IXFH21N60 IXYS

获取价格

HIPERFET Power MOSFTETs
IXFH220N06T3 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFH220N06T3 IXYS

获取价格

Power Field-Effect Transistor
IXFH220N20X3 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFH220N20X3 IXYS

获取价格

Power Field-Effect Transistor,
IXFH22N50P IXYS

获取价格

Polar Power MOSFET HiPerFET