IXFH22N55

更新时间： 2024-11-17 22:40:55

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	72K
描述
HiPerFET Power MOSFET

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中文翻译

获取价格

数据手册

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IXFH22N55 数据手册

HiPerFET^TM

Power MOSFET

IXFH22N55 V_DSS= 550 V

I_{D (cont)}= 22 A

R_DS(on)= 0.27 W

N-Channel Enhancement Mode

Avlanche Rated, High dv/dt, Low t_rr

t_rr

£ 250 ns

Preliminary data

Symbol

TestConditions

MaximumRatings

TO-247 AD

V_DSS

V_DGR

T_J= 25°C to 150°C

550

T_J= 25°C to 150°C; R_GS= 1 MW

V_GS

Continuous

Transient

±20

±30

D (TAB)

V_GSM

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

G = Gate,

S = Source,

D = Drain,

TAB = Drain

E_AR

T_C= 25°C

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

P_D

T_C= 25°C

300

Features

T_J

-55 ... +150

150

°C

• Internationalstandardpackages

JEDEC TO-247 AD

T_JM

T_stg

T_L

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

-55 ... +150

300

1.6 mm (0.063 in) from case for 10 s

Mountingtorque

M_d

1.13/10 Nm/lb.in.

• Low package inductance (< 5 nH)

- easy to drive and to protect

• Fast intrinsic Rectifier

Weight

Applications

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

• Power Factor Control Circuits

• UninterruptiblePowerSupplies(UPS)

• Battery chargers

min. typ. max.

• Switched-modeandresonant-mode

powersupplies

• DC choppers

V_DSS

V_GS= 0 V, I_D= 250 mA

550

V_GS(th)

V_DS= V_GS, I_D= 4 mA

4.5

• Temperatureandlightingcontrols

• Low voltage relays

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

250 mA

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

• Easy to mount with 1 screw

(isolatedmountingscrewhole)

• Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Pulse test, t £ 300 ms, duty cycle d £ 2 %

0.27

• High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

94527A (10/95)

1 - 4

12 3 4

中文翻译

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