5秒后页面跳转
IXFH240N15X3 PDF预览

IXFH240N15X3

更新时间: 2024-11-18 19:49:47
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 309K
描述
Power Field-Effect Transistor,

IXFH240N15X3 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.38
Base Number Matches:1

IXFH240N15X3 数据手册

 浏览型号IXFH240N15X3的Datasheet PDF文件第2页浏览型号IXFH240N15X3的Datasheet PDF文件第3页浏览型号IXFH240N15X3的Datasheet PDF文件第4页浏览型号IXFH240N15X3的Datasheet PDF文件第5页浏览型号IXFH240N15X3的Datasheet PDF文件第6页浏览型号IXFH240N15X3的Datasheet PDF文件第7页 
Advance Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 150V  
ID25 = 240A  
RDS(on) 5.4m  
IXFT240N15X3HV  
IXFH240N15X3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268HV (IXFT..HV)  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25C to 150C  
150  
150  
V
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-247 (IXFH)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IL(RMS)  
IDM  
TC = 25C  
External Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
240  
160  
420  
A
A
A
G
D
S
D (Tab)  
D = Drain  
IA  
TC = 25C  
TC = 25C  
120  
2.2  
A
J
EAS  
G = Gate  
S = Source  
Tab = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
780  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in  
Low Package Inductance  
Weight  
TO-268HV  
TO-247  
4
6
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
150  
V
V
Applications  
2.5  
4.5  
Switch-Mode and Resonant-Mode  
100 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
IDSS  
10 A  
500 A  
TJ = 125C  
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
5.4 m  
DS100852B(10/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

与IXFH240N15X3相关器件

型号 品牌 获取价格 描述 数据表
IXFH24N40 IXYS

获取价格

HIPERFET Power MOSFTETs
IXFH24N50 IXYS

获取价格

HiPerFET Power MOSFETs
IXFH24N50 LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFH24N50Q IXYS

获取价格

HiPerFET Power MOSFETs
IXFH24N50Q LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFH24N50S IXYS

获取价格

Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Met
IXFH24N60X LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFH24N60X IXYS

获取价格

Power Field-Effect Transistor,
IXFH24N80P IXYS

获取价格

PolarHV HiPerFET Power MOSFET
IXFH24N80P LITTELFUSE

获取价格

功能与特色: 优点: 应用: