Datasheet > IXFH26N100X

IXFH26N100X

更新时间： 2024-11-18 20:01:27

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	333K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXFH26N100X 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXFH26N100X 数据手册

Advance Technical Information

X-Class HiPerFET^TM

Power MOSFET

V_DSS= 1000V

I_D25= 26A

R_DS(on) 320m

IXFT26N100XHV

IXFH26N100X

N-Channel Enhancement Mode

Avalanche Rated

TO-268HV

(IXFT)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

1000

D (Tab)

V_DGR

T_J= 25C to 150C, R_GS= 1M

TO-247

(IXFH)

V_GSS

V_GSM

Continuous

Transient

30

40

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

I_A

T_C= 25C

D (Tab)

= Drain

E_AS

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

G = Gate

S = Source

Tab = Drain

860

T_J

-55 ... +150

150

C

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



International Standard Packages

High Voltage Package

Low R_DS(ON)and Q_G

Avalanche Rated

Low Package Inductance

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in



Weight

TO-268HV

TO-247

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 4mA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

1000

Applications

3.5

6.0



Switch-Mode and Resonant-Mode

100 nA

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives



I_DSS

25 A

3 mA



T_J= 125C



Robotics and Servo Controls

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

320 m

DS100935A(9/18)

12 3 4 5 6 7

中文翻译

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