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IXFH26N50P3 PDF预览

IXFH26N50P3

更新时间: 2024-11-05 14:51:43
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 357K
描述
Power Field-Effect Transistor,

IXFH26N50P3 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.7
Base Number Matches:1

IXFH26N50P3 数据手册

 浏览型号IXFH26N50P3的Datasheet PDF文件第2页浏览型号IXFH26N50P3的Datasheet PDF文件第3页浏览型号IXFH26N50P3的Datasheet PDF文件第4页浏览型号IXFH26N50P3的Datasheet PDF文件第5页浏览型号IXFH26N50P3的Datasheet PDF文件第6页浏览型号IXFH26N50P3的Datasheet PDF文件第7页 
Polar3TM HiperFETTM  
PowerMOSFET  
VDSS = 500V  
ID25 = 26A  
RDS(on) 250m  
IXFA26N50P3  
IXFP26N50P3  
IXFQ26N50P3  
IXFH26N50P3  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-3P (IXFQ)  
TO-263 (IXFA)  
TO-220 (IXFP)  
G
S
G
D
G
D (Tab)  
D
S
S
D (Tab)  
D (Tab)  
Symbol  
VDSS  
Test Conditions  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
Maximum Ratings  
TO-247 (IXFH)  
500  
500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
26  
78  
A
A
S
D (Tab)  
D = Drain  
G = Gate  
S = Source  
IA  
TC = 25C  
TC = 25C  
13  
A
Tab = Drain  
EAS  
300  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
35  
V/ns  
W
500  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +150  
Fast Intrinsic Rectifier  
Avalanche Rated  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Low RDS(ON) and QG  
FC  
Md  
Mounting Force (TO-263)  
10..65 / 2.2..14.6  
N/lb  
Nm/lb.in  
Low Package Inductance  
Mounting Torque (TO-220, TO-3P & TO-247)  
1.13 / 10  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
TO-247  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
5.0  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
          100 nA  
IDSS  
25 A  
Laser Drivers  
AC and DC Motor Drives  
Robotics and Servo Controls  
TJ = 125C  
750 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
250 m  
DS100457D(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  

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Power Field-Effect Transistor