Datasheet > IXFH26N50Q

IXFH26N50Q

更新时间： 2024-09-30 14:56:15

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5页	216K
描述
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中文翻译

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数据手册

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IXFH26N50Q 数据手册

HiPerFET^TM

V_DSS

I_D25

R_DS(on)

PowerMOSFETs

IXFH/IXFT 24N50Q

IXFH/IXFT 26N50Q

500 V

24 A

0.23 Ω

500 V

26 A

0.20 Ω

Q-Class

t_rr≤ 250 ns

N-ChannelEnhancementMode

AvalancheRated, LowQ_g,Highdv/dt

Symbol

TestConditions

Maximum Ratings

TO-247AD(IXFH)

V_DSS

V_DGR

T_J= 25°C to 150°C

500

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

Continuous

Transient

±20

±30

(TAB)

V_GSM

I_D25

I_DM

I_AR

T_C= 25°C

24N50Q

104

26N50Q

24N50Q

26N50Q

24N50Q

26N50Q

T_C= 25°C, Note 1

T_C= 25°C

TO-268 (D3) (IXFT) Case Style

E_AR

T_C= 25°C

1.5

(TAB)

E_AS

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

V/ns

T_J≤ 150°C, R_G= 2 Ω

G = Gate,

S = Source,

D = Drain,

TAB = Drain

P_D

T_C= 25°C

300

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Features

T_L

1.6 mm (0.063 in) from case for 10 s

Mountingtorque

300

°C

^zIXYS advanced low Q_gprocess

^zInternationalstandardpackages

^zLow R_{DS (on)}

M_d

1.13/10

Nm/lb.in.

Weight

TO-247

TO-268

^zUnclampedInductiveSwitching(UIS)

rated

^zFast switching

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min.

typ.

max.

^zMolding epoxies meet UL 94 V-0

flammability classification

V_DSS

V_GS= 0 V, I_D= 250 µA

500

V_GS(th)

V_DS= V_GS, I_D= 4 mA

2.5

4.5

Advantages

I_GSS

V_GS= ±20 V_DC, V_DS= 0

±100

Easy to mount

Space savings

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

µA

High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Note 2

24N50Q

26N50Q

0.23

0.20

Ω

DS98512G(03/03)

12 3 4 5

中文翻译

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