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IXFH26N50P PDF预览

IXFH26N50P

更新时间: 2024-11-19 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 390K
描述
功能与特色: 优点: 应用:

IXFH26N50P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:2.25Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):26 A
最大漏源导通电阻:0.23 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):78 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFH26N50P 数据手册

 浏览型号IXFH26N50P的Datasheet PDF文件第2页浏览型号IXFH26N50P的Datasheet PDF文件第3页浏览型号IXFH26N50P的Datasheet PDF文件第4页浏览型号IXFH26N50P的Datasheet PDF文件第5页浏览型号IXFH26N50P的Datasheet PDF文件第6页 
PolarHVTM HiPerFET  
Power MOSFET  
IXFH 26N50P  
IXFV 26N50P  
IXFV 26N50PS  
VDSS = 500 V  
ID25 26 A  
RDS(on) 230 mΩ  
trr 200 ns  
=
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 150° C  
500  
500  
V
TO-247 (IXFH)  
TJ = 25° C to 150° C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuos  
Transient  
30  
40  
V
V
ID25  
IDM  
TC =25° C  
26  
78  
A
A
TC = 25° C, pulse width limited by TJM  
D (TAB)  
IAR  
TC =25° C  
TC =25° C  
TC =25° C  
26  
40  
A
mJ  
J
EAR  
EAS  
1.0  
PLUS220 (IXFV)  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
10  
V/ns  
G
TC =25° C  
400  
W
D
S
D (TAB)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
PLUS220SMD (IXFV_S)  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
Md  
Mounting torque  
Mounting force  
TO-247  
(TO-247)  
1.13/10 Nm/lb.in.  
G
S
FC  
(PLUS220)  
11..65/2.5..15  
N/lb  
D (TAB)  
Weight  
6
5
g
g
PLUS220 & PLUS220SMD  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Features  
l
Symbol  
Test Conditions  
Characteristic Values  
International standard packages  
Fast intrinsic diode  
Unclamped Inductive Switching (UIS)  
rated  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
l
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 30 VDC, VDS = 0  
500  
V
V
l
3.0  
5.5  
Low package inductance  
- easy to drive and to protect  
100  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
l
Easy to mount  
Space savings  
TJ = 125° C  
l
l
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
230 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99276E(12/05)  
© 2006 IXYS All rights reserved  

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