5秒后页面跳转
IXFH24N60X PDF预览

IXFH24N60X

更新时间: 2024-11-18 21:13:03
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 211K
描述
Power Field-Effect Transistor,

IXFH24N60X 技术参数

生命周期:Not Recommended包装说明:,
Reach Compliance Code:compliant风险等级:5.76
Base Number Matches:1

IXFH24N60X 数据手册

 浏览型号IXFH24N60X的Datasheet PDF文件第2页浏览型号IXFH24N60X的Datasheet PDF文件第3页浏览型号IXFH24N60X的Datasheet PDF文件第4页浏览型号IXFH24N60X的Datasheet PDF文件第5页浏览型号IXFH24N60X的Datasheet PDF文件第6页浏览型号IXFH24N60X的Datasheet PDF文件第7页 
Preliminary Technical Information  
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 600V  
ID25 = 24A  
RDS(on) 175m  
IXFA24N60X  
IXFP24N60X  
IXFQ24N60X  
IXFH24N60X  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-220AB (IXFP)  
TO-263 AA (IXFA)  
G
G
S
D
D (Tab)  
S
TO-3P (IXFQ)  
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25C to 150C  
600  
600  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
TO-247 (IXFH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
24  
48  
A
A
IA  
TC = 25C  
TC = 25C  
8
A
G
D
S
EAS  
500  
mJ  
D (Tab)  
D = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
G = Gate  
S = Source  
400  
Tab = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220, TO-3P & TO-247)  
10..65 / 2.2..14.6  
N/lb  
Nm/lb.in  
1.13 / 10  
Low Package Inductance  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
TO-247  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 2.5mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
600  
V
V
Applications  
2.5  
4.5  
Switch-Mode and Resonant-Mode  
100 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
IDSS  
20 A  
750 A  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
175 m  
Robotics and Servo Controls  
DS100647B(5/15)  
© 2015 IXYS CORPORATION, All Rights Reserved  

与IXFH24N60X相关器件

型号 品牌 获取价格 描述 数据表
IXFH24N80P IXYS

获取价格

PolarHV HiPerFET Power MOSFET
IXFH24N80P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFH24N90P IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFH24N90P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFH250 IXYS

获取价格

HIPERFET Power MOSFTETs
IXFH25N10 IXYS

获取价格

HIPERFET Power MOSFTETs
IXFH25N20 IXYS

获取价格

HIPERFET Power MOSFTETs
IXFH26N100X LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFH26N50 IXYS

获取价格

HIPERFET Power MOSFTETs
IXFH26N50 LITTELFUSE

获取价格

功能与特色: 应用: 优点: