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IXFH17N80Q PDF预览

IXFH17N80Q

更新时间: 2024-11-20 11:13:59
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
4页 563K
描述
HiPerFET Power MOSFETs Q-Class

IXFH17N80Q 数据手册

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HiPerFETTM  
PowerMOSFETs  
Q-Class  
IXFH 17N80Q VDSS  
IXFT 17N80Q ID25  
= 800 V  
17 A  
= 0.60 Ω  
=
RDS(on)  
trr 250 ns  
N-ChannelEnhancementMode  
AvalancheRated, Highdv/dt, LowQg  
Preliminary Data Sheet  
TO-268 (D3) (IXFT) Case Style  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 150°C  
800  
800  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
(TAB)  
S
ID25  
IDM  
IAR  
TC = 25°C  
17  
68  
17  
A
A
A
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
TO-247AD(IXFH)  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
1.0  
(TAB)  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
5
V/ns  
PD  
TC = 25°C  
400  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Features  
Weight  
TO-247  
TO-268  
6
4
g
g
z
IXYS advanced low Qg process  
International standard packages  
Low RDS (on)  
Unclamped Inductive Switching (UIS)  
rated  
Fast switching  
Molding epoxies meet UL 94 V-0  
z
z
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
z
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 4 mA  
VGS = 20 VDC, VDS = 0  
800  
V
V
flammability classification  
2.0  
4.5  
100 nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25 µA  
1
mA  
z
Easy to mount  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
0.60  
z
High power density  
© 2003 IXYS All rights reserved  
DS99058A(06/03)  

IXFH17N80Q 替代型号

型号 品牌 替代类型 描述 数据表
FDH44N50 ONSEMI

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功率 MOSFET,N 沟道,UniFETTM,500 V,44 A,120 mΩ,TO-

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