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IXFH20N100P PDF预览

IXFH20N100P

更新时间: 2024-11-20 11:13:59
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
4页 118K
描述
Polar Power MOSFET HiPerFET

IXFH20N100P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:8.52
其他特性:AVALANCHE RATED雪崩能效等级(Eas):800 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1000 V最大漏极电流 (Abs) (ID):20 A
最大漏极电流 (ID):20 A最大漏源导通电阻:0.57 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):660 W
最大脉冲漏极电流 (IDM):50 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFH20N100P 数据手册

 浏览型号IXFH20N100P的Datasheet PDF文件第2页浏览型号IXFH20N100P的Datasheet PDF文件第3页浏览型号IXFH20N100P的Datasheet PDF文件第4页 
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 1000V  
ID25 = 20A  
RDS(on) 570mΩ  
300ns  
IXFH20N100P  
IXFT20N100P  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
trr  
TO-247 (IXFH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1000  
1000  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
TAB  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
20  
50  
A
A
TO-268 (IXFT)  
TC = 25°C, pulse width limited by TJM  
IAR  
TC = 25°C  
TC = 25°C  
10  
A
EAS  
800  
mJ  
G
S
TAB  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
15  
V/ns  
W
660  
G = Gate  
S = Source TAB = Drain  
D
= Drain  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
Maximum lead temperature for soldering  
Plastic body for 10s  
300  
260  
°C  
°C  
z International standard packages  
z Fast recovery diode  
TSOLD  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
Md  
Mounting torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
5
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
1000  
3.5  
V
V
Applications:  
6.5  
z Switched-mode and resonant-mode  
power supplies  
± 200 nA  
z DC-DC Converters  
z Laser Drivers  
IDSS  
VDS = VDSS  
VGS = 0V  
25 μA  
1.5 mA  
TJ = 125°C  
z AC and DC motor controls  
z Robotics and servo controls  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
470  
570 mΩ  
DS99843B(04/08)  
© 2008 IXYS CORPORATION, All rights reserved  

IXFH20N100P 替代型号

型号 品牌 替代类型 描述 数据表
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Polar Power MOSFET HiPerFET

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