Datasheet > IXFH20N100P

IXFH20N100P

更新时间： 2024-11-06 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	147K
描述
功能与特色: 优点: 应用:

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中文翻译

获取价格

数据手册

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IXFH20N100P 数据手册

Polar^TMPower MOSFET

HiPerFET^TM

V_DSS= 1000V

I_D25= 20A

R_DS(on)≤ 570mΩ

≤ 300ns

IXFH20N100P

IXFT20N100P

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

t_rr

TO-247 (IXFH)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

1000

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

TAB

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

I_D25

I_DM

T_C= 25°C

TO-268 (IXFT)

T_C= 25°C, pulse width limited by T_JM

I_AR

T_C= 25°C

E_AS

800

TAB

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

660

G = Gate

S = Source TAB = Drain

= Drain

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Features

T_L

Maximum lead temperature for soldering

Plastic body for 10s

300

260

°C

^zInternational standard packages

^zFast recovery diode

T_SOLD

^zUnclamped Inductive Switching (UIS)

rated

^zLow package inductance

- easy to drive and to protect

M_d

Mounting torque (TO-247)

1.13/10

Nm/lb.in.

Weight

TO-247

TO-268

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

Typ. Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 1mA

V_GS= ± 30V, V_DS= 0V

1000

3.5

Applications:

6.5

^zSwitched-mode and resonant-mode

power supplies

± 200 nA

^zDC-DC Converters

^zLaser Drivers

I_DSS

V_DS= V_DSS

V_GS= 0V

25 μA

1.5 mA

T_J= 125°C

^zAC and DC motor controls

^zRobotics and servo controls

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

470

570 mΩ

DS99843B(04/08)

12 3 4 5

中文翻译

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