Advance Technical Information
PolarHTTM
IXFH 150N15P
VDSS = 150 V
IXFK 150N15P
HiPerFET
ID25 = 150 A
Power MOSFET
RDS(on) ≤ 13 mΩ
N-Channel Enhancement Mode
TO-247(IXFH)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
150
150
V
TJ = 25°C to 175°C; RGS = 1 MΩ
V
G
D
S
(TAB)
VGS
Continuous
Transient
20
30
V
V
VGSM
TO-264(SP) (IXTK)
ID25
TC = 25°C
150
75
A
A
A
ID(RMS)
IDM
External lead current limit
TC = 25°C, pulse width limited by TJM
340
IAR
TC = 25°C
60
A
EAR
EAS
TC = 25°C
TC = 25°C
80
mJ
J
G
D (TAB)
D
S
2.5
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 4 Ω
,
10
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
PD
TC = 25°C
714
W
TJ
-55 ... +175
175
°C
°C
°C
TJM
Tstg
Features
-55 ... +175
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
TL
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
°C
Md
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-264
5.5
10
g
g
Symbol
TestConditions
Characteristic Values
Advantages
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
z
Easy to mount
Space savings
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = 20 VDC, VDS = 0
150
V
V
z
z
3.0
5.0
High power density
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
500
µA
µA
TJ = 175°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
13 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
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DS99328(02/05)