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IXFH15N100Q PDF预览

IXFH15N100Q

更新时间: 2024-11-19 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
3页 216K
描述
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IXFH15N100Q 数据手册

 浏览型号IXFH15N100Q的Datasheet PDF文件第2页浏览型号IXFH15N100Q的Datasheet PDF文件第3页 
HiPerFETTM  
PowerMOSFETs  
Q-Class  
IXFH 15N100Q  
IXFK 15N100Q  
IXFT 15N100Q  
VDSS  
ID25  
= 1000 V  
=
=
15 A  
RDS(on)  
0.7 Ω  
trr 250 ns  
N-ChannelEnhancementMode  
AvalancheRated, LowQg,Highdv/dt  
TO-247 AD (IXFH)  
Preliminary data sheet  
Symbol  
TestConditions  
Maximum Ratings  
(TAB)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
1000  
1000  
V
V
TO-268 (D3) ( IXFT)  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
15  
60  
15  
A
A
A
G
S
EAR  
EAS  
TC = 25°C  
TC = 25°C  
45  
1.5  
mJ  
J
TO-264 AA (IXF
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
5
V/ns  
PD  
TC = 25°C  
360  
W
G
D
S
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
D (TAB)  
G = Gate  
S = Source  
TAB = Drain  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mounting torque  
300  
°C  
Md  
TO-247 1.13/10 Nm/lb.in.  
TO-264  
0.9/6 Nm/lb.in.  
Weight  
Symbol  
TO-247  
TO-268  
TO-264  
6
4
10  
g
g
g
Features  
z IXYS advanced low Qg process  
z International standard packages  
z
Epoxy meet UL 94 V-0, flammability  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
classification  
z Low RDS (on) low Qg  
min. typ. max.  
z Avalanche energy and current rated  
z Fast intrinsic rectifier  
VDSS  
VGS = 0 V, ID = 250 µA  
1000  
3.0  
V
V
VGS(th)  
VDS = VGS, ID = 4 mA  
5.0  
Advantages  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
50 µA  
z
Easy to mount  
Space savings  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
z
2
mA  
z
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
0.7  
Pulse test, t 300 µs, duty cycle d 2 %  
© 2001 IXYS All rights reserved  
98627A (9/01)  

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