Datasheet > IXFH150N17T2

IXFH150N17T2

更新时间： 2024-09-17 11:13:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	180K
描述
TrenchT2 HiperFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IXFH150N17T2 数据手册

Advance Technical Information

TrenchT2^TMHiperFET^TM

Power MOSFET

V_DSS= 175V

I_D25= 150A

R_DS(on)≤ 12.0mΩ

≤ 160ns

IXFH150N17T2

IXFT150N17T2

t_rr

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-247 (IXFH)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

175

D (Tab)

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

TO-268 (IXFT)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

150

400

I_A

E_AS

T_C= 25°C

1.0

D (Tab)

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 175°C

T_C= 25°C

V/ns

G = Gate

S = Source

= Drain

880

Tab = Drain

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

^zHigh Current Handling Capability

^zFast Intrinsic Diode

M_d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

^zDynamaic dv/dt Rated

^zAvalanche Rated

Weight

TO-247

TO-268

Low R_DS(on)

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

175

2.5

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 1mA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Applications

4.5

^zDC-DC Converters

^zBattery Chargers

± 200 nA

^zSwitch-Mode and Resonant-Mode

Power Supplies

I_DSS

10 μA

T_J= 150°C

1.5 mA

^zDC Choppers

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

9.7

12.0 mΩ

^zAC Motor Drives

^zUninterruptible Power Supplies

^zHigh Speed Power Switching

Applications

DS100229(01/10)

12 3 4 5 6

中文翻译

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IXFH150N17T2 替代型号

型号	品牌	替代类型	描述	数据表
IXTH150N17T	IXYS	类似代替	Power Field-Effect Transistor, 150A I(D), 175V, 0.012ohm, 1-Element, N-Channel, Silicon, M
IXFH150N17T	IXYS	类似代替	TrenchHV Power MOSFET HiperFET

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